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DTL7N60SJ-VB Product details
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1. DTL7N60SJ-VB Product Introduction
The DTL7N60SJ-VB is a single N-channel MOSFET in a TO251 package, designed for high voltage applications. The device has a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) range of ±30V. The turn-on voltage (Vth) is 3.5V, ensuring reliable turn-on at the appropriate gate voltage. The on-resistance (RDS(ON)) of the DTL7N60SJ-VB is 650mΩ @ VGS=10V, and the maximum drain current (ID) is 7A. It uses SJ_Multi-EPI technology, which improves the device's voltage resistance and switching performance, making it perform well in high-voltage environments.
The DTL7N60SJ-VB is a single N-channel MOSFET in a TO251 package, designed for high voltage applications. The device has a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) range of ±30V. The turn-on voltage (Vth) is 3.5V, ensuring reliable turn-on at the appropriate gate voltage. The on-resistance (RDS(ON)) of the DTL7N60SJ-VB is 650mΩ @ VGS=10V, and the maximum drain current (ID) is 7A. It uses SJ_Multi-EPI technology, which improves the device's voltage resistance and switching performance, making it perform well in high-voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 600V | 3.5V | 7A | 650mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 600V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 600V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
II. DTL7N60SJ-VB Detailed parameter description
1. **Package type**: TO251
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 600V
4. **Gate-source voltage (VGS)**: ±30V
5. **Throw-on voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 650mΩ @ VGS = 10V
7. **Drain current (ID)**: 7A
8. **Technology**: SJ_Multi-EPI
9. **Maximum power dissipation (PD)**: 50W
10. **Operating temperature range**: -55°C to 150°C
1. **Package type**: TO251
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 600V
4. **Gate-source voltage (VGS)**: ±30V
5. **Throw-on voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 650mΩ @ VGS = 10V
7. **Drain current (ID)**: 7A
8. **Technology**: SJ_Multi-EPI
9. **Maximum power dissipation (PD)**: 50W
10. **Operating temperature range**: -55°C to 150°C
Domain and module applications：
3. Application fields and module examples
The high withstand voltage and stable performance of the DTL7N60SJ-VB MOSFET make it suitable for multiple application fields and modules:
1. **Power converter**: The 600V drain-source voltage capability of the DTL7N60SJ-VB makes it suitable for high voltage power converters such as AC-DC converters and DC-DC converters. In these applications, the MOSFET can provide stable current and voltage control to ensure efficient power conversion.
2. **Inverter**: In solar inverters and other high-power inverters, the DTL7N60SJ-VB can be used as a switching element for high voltage and high current applications. Its low on-resistance and good switching characteristics help improve the overall efficiency and stability of the system.
3. **Motor driver**: In motor drive circuits, this MOSFET can also be used as a high current switch for motor control and load switching. Its high withstand voltage and stable current handling capability make it suitable for demanding motor control applications.
4. **Power Switch**: The DTL7N60SJ-VB is suitable for a variety of power switching applications, including high-power load control and power protection. Its high voltage and current capabilities ensure reliable operation in high-power environments, protecting circuits and equipment from damage.
The high withstand voltage and stable performance of the DTL7N60SJ-VB MOSFET make it suitable for multiple application fields and modules:
1. **Power converter**: The 600V drain-source voltage capability of the DTL7N60SJ-VB makes it suitable for high voltage power converters such as AC-DC converters and DC-DC converters. In these applications, the MOSFET can provide stable current and voltage control to ensure efficient power conversion.
2. **Inverter**: In solar inverters and other high-power inverters, the DTL7N60SJ-VB can be used as a switching element for high voltage and high current applications. Its low on-resistance and good switching characteristics help improve the overall efficiency and stability of the system.
3. **Motor driver**: In motor drive circuits, this MOSFET can also be used as a high current switch for motor control and load switching. Its high withstand voltage and stable current handling capability make it suitable for demanding motor control applications.
4. **Power Switch**: The DTL7N60SJ-VB is suitable for a variety of power switching applications, including high-power load control and power protection. Its high voltage and current capabilities ensure reliable operation in high-power environments, protecting circuits and equipment from damage.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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