中文
English
DTL7N50SJ-VB Product details
Back to previous pageProduct introduction：
DTL7N50SJ-VB MOSFET Product Introduction
The DTL7N50SJ-VB is a high voltage N-channel power MOSFET in a TO251 package. It has a drain-source voltage withstand capability of 500V and is suitable for high voltage circuit applications. This MOSFET uses SJ_Multi-EPI technology to provide stable performance and reliable voltage withstand characteristics. Although its on-resistance is relatively high, it still performs well in high voltage environments and is an ideal choice for high voltage power switching and power management applications.
The DTL7N50SJ-VB is a high voltage N-channel power MOSFET in a TO251 package. It has a drain-source voltage withstand capability of 500V and is suitable for high voltage circuit applications. This MOSFET uses SJ_Multi-EPI technology to provide stable performance and reliable voltage withstand characteristics. Although its on-resistance is relatively high, it still performs well in high voltage environments and is an ideal choice for high voltage power switching and power management applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 500V | 3.5V | 7A | 550mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 500V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 500V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
DTL7N50SJ-VB MOSFET Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 550mΩ@VGS=10V
- **Maximum continuous drain current (ID)**: 7A
- **Technology type**: SJ_Multi-EPI
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 550mΩ@VGS=10V
- **Maximum continuous drain current (ID)**: 7A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
DTL7N50SJ-VB MOSFET Applications and Modules
DTL7N50SJ-VB MOSFET is mainly used in high-voltage power electronic systems. Its 500V withstand voltage makes it very suitable for power converters and power management modules, such as in AC-DC converters, where it can efficiently handle the conversion of high-voltage power supplies. In addition, it is also widely used in industrial power supply systems, high-voltage power management, and motor drive systems. In these applications, DTL7N50SJ-VB can effectively control high-voltage currents to ensure system stability and reliability. Despite its high on-resistance, its reliable performance makes it an important choice in scenarios where high voltage tolerance is required.
DTL7N50SJ-VB MOSFET is mainly used in high-voltage power electronic systems. Its 500V withstand voltage makes it very suitable for power converters and power management modules, such as in AC-DC converters, where it can efficiently handle the conversion of high-voltage power supplies. In addition, it is also widely used in industrial power supply systems, high-voltage power management, and motor drive systems. In these applications, DTL7N50SJ-VB can effectively control high-voltage currents to ensure system stability and reliability. Despite its high on-resistance, its reliable performance makes it an important choice in scenarios where high voltage tolerance is required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
