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DTL5N70SJ-VB Product details
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DTL5N70SJ-VB MOSFET Product Introduction
The DTL5N70SJ-VB is a high voltage, high power N-channel MOSFET in a TO-251 package. This MOSFET is designed to withstand drain-source voltages (VDS) up to 700V, making it ideal for high voltage applications. Its threshold voltage (Vth) is 3.5V, ensuring that it can be turned on at a lower gate drive voltage. The on-resistance (RDS(ON)) is 1000mΩ at a gate-source voltage (VGS) of 10V, providing reliable current conduction performance. The maximum drain current (ID) of the DTL5N70SJ-VB is 5A, making it suitable for medium power applications. Using SJ_Multi-EPI technology, this MOSFET provides high efficiency and good reliability.
The DTL5N70SJ-VB is a high voltage, high power N-channel MOSFET in a TO-251 package. This MOSFET is designed to withstand drain-source voltages (VDS) up to 700V, making it ideal for high voltage applications. Its threshold voltage (Vth) is 3.5V, ensuring that it can be turned on at a lower gate drive voltage. The on-resistance (RDS(ON)) is 1000mΩ at a gate-source voltage (VGS) of 10V, providing reliable current conduction performance. The maximum drain current (ID) of the DTL5N70SJ-VB is 5A, making it suitable for medium power applications. Using SJ_Multi-EPI technology, this MOSFET provides high efficiency and good reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
1. **Package**: TO-251
- Surface mount package with good heat dissipation and compact size for medium power density applications.
2. **Configuration**: Single N-channel
- Single N-channel configuration for applications where a positive voltage is applied to the gate relative to the source.
3. **Drain-source voltage (VDS)**: 700V
- The maximum drain-to-source voltage that can be tolerated.
4. **Gate-source voltage (VGS)**: ±30V
- The maximum voltage that can be applied between the gate and source.
5. **Threshold voltage (Vth)**: 3.5V
- The voltage at which the MOSFET starts to turn on.
6. **On-resistance (RDS(ON))**:
- **1000mΩ at 10V**
- The resistance between the drain and source when the MOSFET is fully turned on.
7. **Continuous leakage current (ID)**: 5A
- The maximum continuous current that the MOSFET can handle.
8. **Technology**: SJ_Multi-EPI
- A multi-layer EPI (epitaxial) technology used to improve the performance and reliability of MOSFETs.
1. **Package**: TO-251
- Surface mount package with good heat dissipation and compact size for medium power density applications.
2. **Configuration**: Single N-channel
- Single N-channel configuration for applications where a positive voltage is applied to the gate relative to the source.
3. **Drain-source voltage (VDS)**: 700V
- The maximum drain-to-source voltage that can be tolerated.
4. **Gate-source voltage (VGS)**: ±30V
- The maximum voltage that can be applied between the gate and source.
5. **Threshold voltage (Vth)**: 3.5V
- The voltage at which the MOSFET starts to turn on.
6. **On-resistance (RDS(ON))**:
- **1000mΩ at 10V**
- The resistance between the drain and source when the MOSFET is fully turned on.
7. **Continuous leakage current (ID)**: 5A
- The maximum continuous current that the MOSFET can handle.
8. **Technology**: SJ_Multi-EPI
- A multi-layer EPI (epitaxial) technology used to improve the performance and reliability of MOSFETs.
Domain and module applications：
Application Examples
The DTL5N70SJ-VB MOSFET is suitable for the following fields and modules:
1. **High-voltage switching power supply**:
- Due to its 700V drain-source voltage capability, this MOSFET is ideal for high-voltage switching power supplies (SMPS). It can handle high voltage and medium current while maintaining low power consumption and high efficiency. Suitable for various power adapters, industrial power supplies, and power modules.
2. **Power conversion equipment**:
- In power conversion equipment such as inverters and power conditioners, this MOSFET can be used as a high-voltage switching element to provide efficient power conversion. Its high voltage capability makes it suitable for photovoltaic inverters, wind power generation systems, and other high-voltage power management applications.
3. **Welding equipment and high-power circuits**:
- The DTL5N70SJ-VB is suitable for use in welding equipment and other high-power circuits as a switching element for high-voltage and high-power switching operations. These applications require high voltage tolerance and high current capability to ensure the stability and reliability of the equipment.
4. **Motor Drive and Control**:
- In motor drive systems, the DTL5N70SJ-VB can be used as a high-voltage switching element to control the start, stop and speed regulation of the motor. Its high voltage capability and reliable current conduction performance make it suitable for medium and high power industrial motor control and drive modules.
The high voltage and power characteristics of the DTL5N70SJ-VB make it an ideal choice for a variety of high voltage and medium power applications.
The DTL5N70SJ-VB MOSFET is suitable for the following fields and modules:
1. **High-voltage switching power supply**:
- Due to its 700V drain-source voltage capability, this MOSFET is ideal for high-voltage switching power supplies (SMPS). It can handle high voltage and medium current while maintaining low power consumption and high efficiency. Suitable for various power adapters, industrial power supplies, and power modules.
2. **Power conversion equipment**:
- In power conversion equipment such as inverters and power conditioners, this MOSFET can be used as a high-voltage switching element to provide efficient power conversion. Its high voltage capability makes it suitable for photovoltaic inverters, wind power generation systems, and other high-voltage power management applications.
3. **Welding equipment and high-power circuits**:
- The DTL5N70SJ-VB is suitable for use in welding equipment and other high-power circuits as a switching element for high-voltage and high-power switching operations. These applications require high voltage tolerance and high current capability to ensure the stability and reliability of the equipment.
4. **Motor Drive and Control**:
- In motor drive systems, the DTL5N70SJ-VB can be used as a high-voltage switching element to control the start, stop and speed regulation of the motor. Its high voltage capability and reliable current conduction performance make it suitable for medium and high power industrial motor control and drive modules.
The high voltage and power characteristics of the DTL5N70SJ-VB make it an ideal choice for a variety of high voltage and medium power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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