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DTL5N65SJ-VB Product details
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DTL5N65SJ-VB MOSFET Product Introduction
DTL5N65SJ-VB is a high voltage single N-channel MOSFET packaged in TO251, designed for high voltage applications. It has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, and uses SJ_Multi-EPI technology to improve the device's voltage resistance and switching performance. The MOSFET has a threshold voltage (Vth) of 3.5V, a maximum on-resistance (RDS(ON)) of 950mΩ at VGS=10V, and supports a maximum drain current (ID) of 5A. Its high voltage tolerance and low on-resistance enable it to perform well in high voltage applications.
DTL5N65SJ-VB is a high voltage single N-channel MOSFET packaged in TO251, designed for high voltage applications. It has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, and uses SJ_Multi-EPI technology to improve the device's voltage resistance and switching performance. The MOSFET has a threshold voltage (Vth) of 3.5V, a maximum on-resistance (RDS(ON)) of 950mΩ at VGS=10V, and supports a maximum drain current (ID) of 5A. Its high voltage tolerance and low on-resistance enable it to perform well in high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package type**: TO251
- The TO251 package is a small surface mount package suitable for medium power applications and has good heat dissipation performance.
- **Configuration**: Single N-channel
- Single N-channel MOSFET, suitable for switching and power amplifier applications, with good switching performance and stable electrical characteristics.
- **Drain-source voltage (VDS)**: 650V
- This MOSFET can withstand voltages up to 650V, suitable for high voltage circuit applications.
- **Gate-source voltage (VGS)**: ±30V
- The maximum voltage that the gate can withstand is ±30V, which adapts to a variety of drive voltage requirements.
- **Threshold voltage (Vth)**: 3.5V
- Starts to conduct at VGS=3.5V, suitable for medium voltage control signal applications.
- **On-resistance (RDS(ON))**:
- **VGS=10V**: 950mΩ
- Despite the higher on-resistance, this design provides reasonable performance in high voltage applications for a 650V high voltage MOSFET.
- **Drain current (ID)**: 5A
- The maximum drain current is 5A, suitable for medium power load applications.
- **Technology**: SJ_Multi-EPI
- SJ_Multi-EPI technology provides high voltage handling capability and excellent switching performance, suitable for high voltage and high power circuit designs.
- **Package type**: TO251
- The TO251 package is a small surface mount package suitable for medium power applications and has good heat dissipation performance.
- **Configuration**: Single N-channel
- Single N-channel MOSFET, suitable for switching and power amplifier applications, with good switching performance and stable electrical characteristics.
- **Drain-source voltage (VDS)**: 650V
- This MOSFET can withstand voltages up to 650V, suitable for high voltage circuit applications.
- **Gate-source voltage (VGS)**: ±30V
- The maximum voltage that the gate can withstand is ±30V, which adapts to a variety of drive voltage requirements.
- **Threshold voltage (Vth)**: 3.5V
- Starts to conduct at VGS=3.5V, suitable for medium voltage control signal applications.
- **On-resistance (RDS(ON))**:
- **VGS=10V**: 950mΩ
- Despite the higher on-resistance, this design provides reasonable performance in high voltage applications for a 650V high voltage MOSFET.
- **Drain current (ID)**: 5A
- The maximum drain current is 5A, suitable for medium power load applications.
- **Technology**: SJ_Multi-EPI
- SJ_Multi-EPI technology provides high voltage handling capability and excellent switching performance, suitable for high voltage and high power circuit designs.
Domain and module applications：
Applicable fields and module applications
The high voltage tolerance and relatively low on-resistance of the DTL5N65SJ-VB MOSFET make it suitable for multiple high-voltage applications. In power electronic equipment such as high-voltage switching power supplies, power inverters, and frequency converters, the DTL5N65SJ-VB can be used as a key switching device for high-voltage power conversion and regulation.
In industrial automation systems, this MOSFET can be applied to high-voltage motor control and power regulation modules to provide stable switching operation and overcurrent protection. In addition, it is also suitable for protection circuits of electrical equipment, such as protection switches and fail-safe modules for high-voltage power supplies.
In household appliances and power tools, the DTL5N65SJ-VB can effectively handle high-voltage loads to ensure the safety and reliability of the equipment. This includes occasions where high-voltage switches are required in electrical appliances such as air conditioners, washing machines, and power tools.
In general, DTL5N65SJ-VB is a high-voltage, high-reliability MOSFET, suitable for a variety of high-voltage, high-power application scenarios.
The high voltage tolerance and relatively low on-resistance of the DTL5N65SJ-VB MOSFET make it suitable for multiple high-voltage applications. In power electronic equipment such as high-voltage switching power supplies, power inverters, and frequency converters, the DTL5N65SJ-VB can be used as a key switching device for high-voltage power conversion and regulation.
In industrial automation systems, this MOSFET can be applied to high-voltage motor control and power regulation modules to provide stable switching operation and overcurrent protection. In addition, it is also suitable for protection circuits of electrical equipment, such as protection switches and fail-safe modules for high-voltage power supplies.
In household appliances and power tools, the DTL5N65SJ-VB can effectively handle high-voltage loads to ensure the safety and reliability of the equipment. This includes occasions where high-voltage switches are required in electrical appliances such as air conditioners, washing machines, and power tools.
In general, DTL5N65SJ-VB is a high-voltage, high-reliability MOSFET, suitable for a variety of high-voltage, high-power application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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