DTL2N70SJ-VB Product details
Product introduction:
The DTL2N70SJ-VB is a high voltage N-channel MOSFET in a TO251 package, designed for high voltage applications. Its drain-source voltage (VDS) reaches 700V, enabling it to perform well in high voltage environments. This MOSFET uses SJ_Multi-EPI technology to provide excellent electrical characteristics and reliability. The threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 2400mΩ (at VGS = 10V), and it can withstand a maximum drain current (ID) of 2A. The DTL2N70SJ-VB is suitable for application scenarios that require high voltage tolerance, ensuring stable and reliable operation in high voltage operations.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 2A | 2400mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
- **Package type**: TO251
- **Channel configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2400mΩ @ VGS = 10V
- **Drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI technology
Domain and module applications:
**1. High-voltage power supply **
DTL2N70SJ-VB is ideal for high-voltage power supply modules and power converters. In these applications, its 700V drain-source voltage can handle high voltage conditions and ensure the stability and safety of the power supply system. The MOSFET can effectively manage the current flow during the voltage conversion process to maintain the efficient operation of the power supply.
**2. Inverter **
In photovoltaic inverters and other high-voltage inverter applications, the high voltage tolerance of DTL2N70SJ-VB enables it to handle the high voltages generated in the inverter. This helps to improve the overall efficiency and stability of the inverter, and is suitable for photovoltaic power generation systems and other inverters that require high-voltage conversion.
**3. Lighting control **
In high-voltage lighting systems, such as xenon lamps or high-voltage sodium lamp drivers, DTL2N70SJ-VB can be used as a switching element for lighting control. Its high voltage handling capability ensures stable control of high-voltage lighting equipment and reliable operation of lamps.
**4. Motor drive**
The DTL2N70SJ-VB is also suitable for high-voltage motor drive circuits. It can operate stably in a high-voltage environment and is suitable for driving high-voltage motors and performing switching operations.
**5. Switching power supply**
In high-voltage switching power supply modules, the high voltage withstand capability of this MOSFET enables it to be used as the main switching element for power management. Despite its high on-resistance, the DTL2N70SJ-VB can still effectively handle power conversion tasks in high-voltage applications.
With its high voltage capability and stable performance, the DTL2N70SJ-VB provides a reliable solution in a variety of high-voltage electronic devices and applications.
Technical support:
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