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DTL2N60SJ-VB Product details
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Product Introduction
The DTL2N60SJ-VB is a high-voltage N-channel MOSFET in TO251 package. This MOSFET uses SJ_Multi-EPI technology and is designed for high-voltage applications, providing a drain-source voltage (VDS) capability of up to 600V. It has a large gate-source voltage range (±30V) and threshold voltage (Vth), suitable for power management and switch control applications that require high voltage resistance. The DTL2N60SJ-VB provides a relatively high on-resistance, but its voltage resistance allows it to perform well in specific application scenarios.
The DTL2N60SJ-VB is a high-voltage N-channel MOSFET in TO251 package. This MOSFET uses SJ_Multi-EPI technology and is designed for high-voltage applications, providing a drain-source voltage (VDS) capability of up to 600V. It has a large gate-source voltage range (±30V) and threshold voltage (Vth), suitable for power management and switch control applications that require high voltage resistance. The DTL2N60SJ-VB provides a relatively high on-resistance, but its voltage resistance allows it to perform well in specific application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 600V | 3.3V | 2A | 2300mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 600V | 3.3V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 600V | 3.3V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Model**: DTL2N60SJ-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.3V
- **On-resistance (RDS(ON))**: 2300mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI
- **Model**: DTL2N60SJ-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.3V
- **On-resistance (RDS(ON))**: 2300mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application fields and module examples
The high withstand voltage characteristics of the DTL2N60SJ-VB MOSFET make it suitable for some specific application fields and modules:
1. **High-voltage power switch**: Due to its 600V drain-source voltage capability, the DTL2N60SJ-VB is often used in high-voltage power switch applications, such as in high-voltage DC-DC converters and power modules. It can effectively handle high voltages to ensure stable and safe operation of the power system.
2. **Power inverter**: In power inverters, this MOSFET can be used as a switching element to help convert DC power to AC power. Its high withstand voltage characteristics are suitable for inverter circuits that require high voltage isolation.
3. **Motor drive circuit**: The DTL2N60SJ-VB is suitable for motor drive circuits that require high withstand voltage, especially in industrial motors and power tools. In these applications, this MOSFET can withstand higher voltages and provide stable switching performance.
4. **High-voltage switch control**: In some high-voltage switch control applications, such as high-voltage load switches and power distribution systems, the high VDS capability and voltage-withstand design of this MOSFET enable it to effectively control high-voltage loads and ensure the safety and reliability of the system.
These applications demonstrate the capabilities and applicability of the DTL2N60SJ-VB in high-voltage environments, especially in power management and switch control applications that need to handle high voltages.
The high withstand voltage characteristics of the DTL2N60SJ-VB MOSFET make it suitable for some specific application fields and modules:
1. **High-voltage power switch**: Due to its 600V drain-source voltage capability, the DTL2N60SJ-VB is often used in high-voltage power switch applications, such as in high-voltage DC-DC converters and power modules. It can effectively handle high voltages to ensure stable and safe operation of the power system.
2. **Power inverter**: In power inverters, this MOSFET can be used as a switching element to help convert DC power to AC power. Its high withstand voltage characteristics are suitable for inverter circuits that require high voltage isolation.
3. **Motor drive circuit**: The DTL2N60SJ-VB is suitable for motor drive circuits that require high withstand voltage, especially in industrial motors and power tools. In these applications, this MOSFET can withstand higher voltages and provide stable switching performance.
4. **High-voltage switch control**: In some high-voltage switch control applications, such as high-voltage load switches and power distribution systems, the high VDS capability and voltage-withstand design of this MOSFET enable it to effectively control high-voltage loads and ensure the safety and reliability of the system.
These applications demonstrate the capabilities and applicability of the DTL2N60SJ-VB in high-voltage environments, especially in power management and switch control applications that need to handle high voltages.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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