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DTL11N60SJ-VB Product details
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Product Introduction
DTL11N60SJ-VB is a high voltage N-channel MOSFET with TO251 package type and SJ_Multi-EPI technology. This MOSFET is designed to handle high voltage applications and has relatively high current handling capability and reliable switching performance. Its high drain-source voltage and relatively low on-resistance make it suitable for a variety of power conversion and power management applications.
DTL11N60SJ-VB is a high voltage N-channel MOSFET with TO251 package type and SJ_Multi-EPI technology. This MOSFET is designed to handle high voltage applications and has relatively high current handling capability and reliable switching performance. Its high drain-source voltage and relatively low on-resistance make it suitable for a variety of power conversion and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 600V | 3.5V | 11A | 380mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 380mΩ @ VGS = 10V
- **Drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI technology
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 380mΩ @ VGS = 10V
- **Drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI technology
Domain and module applications：
Applications and Module Examples
1. **High Voltage Power Conversion**: The DTL11N60SJ-VB is suitable for power conversion applications that require high voltage handling, such as AC-DC converters and DC-DC converters. Its high drain-source voltage enables it to handle higher input voltages, while its relatively low on-resistance helps improve conversion efficiency.
2. **Switch Mode Power Supply (SMPS)**: In a switch mode power supply, this MOSFET can be used as a high voltage switching element. Its high voltage handling capability and low RDS(ON) can effectively reduce power loss and ensure system stability.
3. **Lighting and Heater Control**: The DTL11N60SJ-VB is also suitable for control modules for lighting and heaters. Because it can withstand high voltages, it is suitable for load switching applications that require high current and high voltage.
4. **Power Protection Circuit**: In a power protection circuit, this MOSFET can be used for overvoltage protection and current limiting of high voltage circuits. Its high withstand voltage characteristics ensure reliable operation under extreme conditions, protecting other circuit components from damage.
These applications demonstrate the DTL11N60SJ-VB's versatile application capabilities and reliability in high voltage, high current environments.
1. **High Voltage Power Conversion**: The DTL11N60SJ-VB is suitable for power conversion applications that require high voltage handling, such as AC-DC converters and DC-DC converters. Its high drain-source voltage enables it to handle higher input voltages, while its relatively low on-resistance helps improve conversion efficiency.
2. **Switch Mode Power Supply (SMPS)**: In a switch mode power supply, this MOSFET can be used as a high voltage switching element. Its high voltage handling capability and low RDS(ON) can effectively reduce power loss and ensure system stability.
3. **Lighting and Heater Control**: The DTL11N60SJ-VB is also suitable for control modules for lighting and heaters. Because it can withstand high voltages, it is suitable for load switching applications that require high current and high voltage.
4. **Power Protection Circuit**: In a power protection circuit, this MOSFET can be used for overvoltage protection and current limiting of high voltage circuits. Its high withstand voltage characteristics ensure reliable operation under extreme conditions, protecting other circuit components from damage.
These applications demonstrate the DTL11N60SJ-VB's versatile application capabilities and reliability in high voltage, high current environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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