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DTL10N60SJ-VB Product details
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1. DTL10N60SJ-VB Product Introduction
DTL10N60SJ-VB is a single N-channel MOSFET in TO251 package, designed for high voltage applications. The device has a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) range of ±30V. Its turn-on voltage (Vth) is 3.5V, which allows it to be turned on stably under appropriate gate voltage. The on-resistance (RDS(ON)) of DTL10N60SJ-VB is 450mΩ @ VGS=10V, the maximum drain current (ID) is 10A, and it uses SJ_Multi-EPI technology, which improves the reliability and voltage resistance of the device. This MOSFET is suitable for applications requiring high voltage and high current.
DTL10N60SJ-VB is a single N-channel MOSFET in TO251 package, designed for high voltage applications. The device has a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) range of ±30V. Its turn-on voltage (Vth) is 3.5V, which allows it to be turned on stably under appropriate gate voltage. The on-resistance (RDS(ON)) of DTL10N60SJ-VB is 450mΩ @ VGS=10V, the maximum drain current (ID) is 10A, and it uses SJ_Multi-EPI technology, which improves the reliability and voltage resistance of the device. This MOSFET is suitable for applications requiring high voltage and high current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 600V | 3.5V | 10A | 450mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 600V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 600V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
II. DTL10N60SJ-VB Detailed parameter description
1. **Package type**: TO251
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 600V
4. **Gate-source voltage (VGS)**: ±30V
5. **Throw-on voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 450mΩ @ VGS = 10V
7. **Drain current (ID)**: 10A
8. **Technology**: SJ_Multi-EPI
9. **Maximum power dissipation (PD)**: 50W
10. **Operating temperature range**: -55°C to 150°C
1. **Package type**: TO251
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 600V
4. **Gate-source voltage (VGS)**: ±30V
5. **Throw-on voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 450mΩ @ VGS = 10V
7. **Drain current (ID)**: 10A
8. **Technology**: SJ_Multi-EPI
9. **Maximum power dissipation (PD)**: 50W
10. **Operating temperature range**: -55°C to 150°C
Domain and module applications：
3. Application fields and module examples
The high withstand voltage and moderate on-resistance of the DTL10N60SJ-VB MOSFET make it superior in the following fields and modules:
1. **Power converter**: Due to its drain-source voltage capability of up to 600V, the DTL10N60SJ-VB is suitable for high-voltage power converters such as AC-DC converters and DC-DC converters. This enables it to operate stably in high-voltage environments and provide reliable power conversion.
2. **Inverter**: In solar inverters or other high-power inverters, this MOSFET can be used as a switching element to achieve high voltage and high current control. Its low on-resistance and high withstand voltage ensure high efficiency and stability.
3. **Power switch**: The DTL10N60SJ-VB is also suitable for power switching applications with high current loads, such as motor drives and high-power load control. Its high withstand voltage and high drain current capability enable it to handle applications with high power requirements.
4. **Power protection circuit**: In high-voltage power protection circuits, this MOSFET can be used for overvoltage protection and overcurrent protection to ensure the safety of circuits and equipment. Its excellent withstand voltage characteristics and switching performance make it an ideal choice for high-voltage protection applications.
The high withstand voltage and moderate on-resistance of the DTL10N60SJ-VB MOSFET make it superior in the following fields and modules:
1. **Power converter**: Due to its drain-source voltage capability of up to 600V, the DTL10N60SJ-VB is suitable for high-voltage power converters such as AC-DC converters and DC-DC converters. This enables it to operate stably in high-voltage environments and provide reliable power conversion.
2. **Inverter**: In solar inverters or other high-power inverters, this MOSFET can be used as a switching element to achieve high voltage and high current control. Its low on-resistance and high withstand voltage ensure high efficiency and stability.
3. **Power switch**: The DTL10N60SJ-VB is also suitable for power switching applications with high current loads, such as motor drives and high-power load control. Its high withstand voltage and high drain current capability enable it to handle applications with high power requirements.
4. **Power protection circuit**: In high-voltage power protection circuits, this MOSFET can be used for overvoltage protection and overcurrent protection to ensure the safety of circuits and equipment. Its excellent withstand voltage characteristics and switching performance make it an ideal choice for high-voltage protection applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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