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DTK20N65SJ-VB Product details
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DTK20N65SJ-VB MOSFET Product Introduction
The DTK20N65SJ-VB is a high voltage N-channel power MOSFET in a TO263 package. This MOSFET has a drain-source voltage withstand capability of 650V, making it ideal for high voltage applications. It uses SJ_Multi-EPI technology, which provides excellent conduction performance and high voltage withstand capability, suitable for use in various environments requiring high voltage and high power. This MOSFET has a relatively high on-resistance, but its reliability and stability make it an ideal choice in high voltage applications.
The DTK20N65SJ-VB is a high voltage N-channel power MOSFET in a TO263 package. This MOSFET has a drain-source voltage withstand capability of 650V, making it ideal for high voltage applications. It uses SJ_Multi-EPI technology, which provides excellent conduction performance and high voltage withstand capability, suitable for use in various environments requiring high voltage and high power. This MOSFET has a relatively high on-resistance, but its reliability and stability make it an ideal choice in high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
DTK20N65SJ-VB MOSFET Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ@VGS=10V
- **Maximum continuous drain current (ID)**: 20A
- **Technology type**: SJ_Multi-EPI
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ@VGS=10V
- **Maximum continuous drain current (ID)**: 20A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
DTK20N65SJ-VB MOSFET Applications and Modules
DTK20N65SJ-VB MOSFET is mainly used in high voltage applications. Its high withstand voltage of 650V makes it suitable for power converters, power management modules and high voltage switching circuits. In power inverters, this MOSFET can handle the conversion and regulation of high voltage DC power to provide stable power output for solar inverters or wind inverters. It is also suitable for high voltage power supply systems to ensure stable operation of the power supply system by controlling and regulating high voltage current. In addition, DTK20N65SJ-VB can also be used in industrial equipment and motor drive systems to achieve efficient switch control and load management under high voltage conditions.
DTK20N65SJ-VB MOSFET is mainly used in high voltage applications. Its high withstand voltage of 650V makes it suitable for power converters, power management modules and high voltage switching circuits. In power inverters, this MOSFET can handle the conversion and regulation of high voltage DC power to provide stable power output for solar inverters or wind inverters. It is also suitable for high voltage power supply systems to ensure stable operation of the power supply system by controlling and regulating high voltage current. In addition, DTK20N65SJ-VB can also be used in industrial equipment and motor drive systems to achieve efficient switch control and load management under high voltage conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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