DTK20N60SJ-VB Product details
Product introduction:
The DTK20N60SJ-VB is a high-voltage N-channel MOSFET in a TO263 package. It is designed to withstand drain-source voltages up to 600V and is suitable for applications requiring high voltage and high current carrying capacity. With a gate-source voltage (VGS) range of 30V and a gate threshold voltage (Vth) of 3.5V, the device is suitable for high-efficiency power conversion and power management. The DTK20N60SJ-VB uses SJ_Multi-EPI technology, which can improve the device's breakdown voltage and switching efficiency, enabling it to perform well in high-voltage and high-power environments. Its on-resistance (RDS(ON)) is 190mΩ, which can maintain low energy losses under high voltage conditions.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 20A | 190mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI technology
- **Maximum power consumption**: Calculated according to specific heat dissipation conditions
- **Operating temperature range**: -55°C to 150°C
Domain and module applications:
The high voltage carrying capacity and high current handling capability of the DTK20N60SJ-VB MOSFET enable it to excel in multiple high-power applications:
1. **Switching Power Supply (SMPS)**: The DTK20N60SJ-VB is suitable for the high voltage part of the switching power supply (SMPS), especially in high-power power converters that require high efficiency and stability. Its high withstand voltage and low on-resistance can effectively improve the efficiency of the system and reduce energy loss.
2. **High-voltage DC power supply**: In high-voltage DC power supply systems, the DTK20N60SJ-VB can provide reliable switching control to ensure stable operation in high-voltage environments. It is suitable for high-voltage switches and protection circuits in industrial equipment, communication systems, and power supply equipment.
3. **Power Converters**: For power converters that require high voltage and high current, the DTK20N60SJ-VB provides efficient current control for applications such as electric vehicle chargers, renewable energy systems such as photovoltaic inverters.
4. **Motor Drive Control**: In high-voltage motor drive applications, the DTK20N60SJ-VB is able to stably drive high-voltage motors, suitable for use in power tools, large household appliances, and industrial automation equipment. This MOSFET can effectively control the start, run, and stop states of the motor.
These application examples demonstrate the wide applicability of the DTK20N60SJ-VB in power electronics systems that require high voltage, high current, and high power handling.
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