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DTK15N60SJ-VB Product details
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DTK15N60SJ-VB MOSFET Product Introduction
The DTK15N60SJ-VB is a high voltage, high power N-channel MOSFET in a TO-263 package. It is designed to withstand drain-source voltages (VDS) up to 600V, making it ideal for high voltage applications. With a threshold voltage (Vth) of 3.5V, the MOSFET can start conducting at relatively low gate voltages. Its on-resistance (RDS(ON)) is 280mΩ at a gate-source voltage (VGS) of 10V, providing good current conduction performance. The maximum drain current (ID) of the DTK15N60SJ-VB is 15A, meeting the needs of medium and high power applications. Using SJ_Multi-EPI technology, this MOSFET combines excellent electrical performance and reliability.
The DTK15N60SJ-VB is a high voltage, high power N-channel MOSFET in a TO-263 package. It is designed to withstand drain-source voltages (VDS) up to 600V, making it ideal for high voltage applications. With a threshold voltage (Vth) of 3.5V, the MOSFET can start conducting at relatively low gate voltages. Its on-resistance (RDS(ON)) is 280mΩ at a gate-source voltage (VGS) of 10V, providing good current conduction performance. The maximum drain current (ID) of the DTK15N60SJ-VB is 15A, meeting the needs of medium and high power applications. Using SJ_Multi-EPI technology, this MOSFET combines excellent electrical performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 15A | 280mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
1. **Package**: TO-263
- Surface mount package with good thermal management and durability, suitable for high power density applications.
2. **Configuration**: Single N-channel
- Single N-channel configuration, suitable for applications where the gate is positively voltageed relative to the source.
3. **Drain-source voltage (VDS)**: 600V
- The maximum drain-to-source voltage that can be tolerated.
4. **Gate-source voltage (VGS)**: ±30V
- The maximum voltage that can be applied between the gate and the source.
5. **Threshold voltage (Vth)**: 3.5V
- The voltage at which the MOSFET starts to conduct.
6. **On-resistance (RDS(ON))**:
- 280mΩ at 10V**
- The resistance between the drain and source when the MOSFET is fully on.
7. **Continuous leakage current (ID)**: 15A
- The maximum continuous current that the MOSFET can handle.
8. **Technology**: SJ_Multi-EPI
- A multi-layer EPI (epitaxial) technology designed to improve the performance and reliability of MOSFETs.
1. **Package**: TO-263
- Surface mount package with good thermal management and durability, suitable for high power density applications.
2. **Configuration**: Single N-channel
- Single N-channel configuration, suitable for applications where the gate is positively voltageed relative to the source.
3. **Drain-source voltage (VDS)**: 600V
- The maximum drain-to-source voltage that can be tolerated.
4. **Gate-source voltage (VGS)**: ±30V
- The maximum voltage that can be applied between the gate and the source.
5. **Threshold voltage (Vth)**: 3.5V
- The voltage at which the MOSFET starts to conduct.
6. **On-resistance (RDS(ON))**:
- 280mΩ at 10V**
- The resistance between the drain and source when the MOSFET is fully on.
7. **Continuous leakage current (ID)**: 15A
- The maximum continuous current that the MOSFET can handle.
8. **Technology**: SJ_Multi-EPI
- A multi-layer EPI (epitaxial) technology designed to improve the performance and reliability of MOSFETs.
Domain and module applications：
Application Examples
The DTK15N60SJ-VB MOSFET is suitable for the following fields and modules:
1. **High-voltage Switching Power Supply**:
- Due to its 600V drain-source voltage capability, this MOSFET is suitable for high-voltage switching power supplies (SMPS). In these applications, it is able to handle high voltages and medium currents while maintaining low power consumption and high efficiency. It is suitable for high-power power adapters and industrial power modules.
2. **Power Conversion and Management**:
- In power conversion systems, such as inverters and power conditioners, this MOSFET can be used as a high-voltage switch to provide efficient power conversion. Its high drain-source voltage and reliable on-resistance make it suitable for high-voltage power management systems such as photovoltaic inverters and electric vehicle chargers.
3. **Industrial Motor Drive**:
- In industrial motor drive systems, the DTK15N60SJ-VB can be used as a switching element to control the start, stop and speed regulation of the motor. Its high voltage tolerance and high current handling capability make it suitable for use in industrial motor control and drive modules.
4. **Welding Equipment and High Power Circuits**:
- The high voltage and high current capabilities of the DTK15N60SJ-VB MOSFET make it suitable for high power switching applications in welding equipment and other high power circuits. These applications require high voltage tolerance and high efficiency to ensure stable operation and reliability of the equipment.
The high performance and high voltage resistance of the DTK15N60SJ-VB make it excellent in a variety of high voltage and high power applications.
The DTK15N60SJ-VB MOSFET is suitable for the following fields and modules:
1. **High-voltage Switching Power Supply**:
- Due to its 600V drain-source voltage capability, this MOSFET is suitable for high-voltage switching power supplies (SMPS). In these applications, it is able to handle high voltages and medium currents while maintaining low power consumption and high efficiency. It is suitable for high-power power adapters and industrial power modules.
2. **Power Conversion and Management**:
- In power conversion systems, such as inverters and power conditioners, this MOSFET can be used as a high-voltage switch to provide efficient power conversion. Its high drain-source voltage and reliable on-resistance make it suitable for high-voltage power management systems such as photovoltaic inverters and electric vehicle chargers.
3. **Industrial Motor Drive**:
- In industrial motor drive systems, the DTK15N60SJ-VB can be used as a switching element to control the start, stop and speed regulation of the motor. Its high voltage tolerance and high current handling capability make it suitable for use in industrial motor control and drive modules.
4. **Welding Equipment and High Power Circuits**:
- The high voltage and high current capabilities of the DTK15N60SJ-VB MOSFET make it suitable for high power switching applications in welding equipment and other high power circuits. These applications require high voltage tolerance and high efficiency to ensure stable operation and reliability of the equipment.
The high performance and high voltage resistance of the DTK15N60SJ-VB make it excellent in a variety of high voltage and high power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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