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DTK14N50SJ-VB Product details
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DTK14N50SJ-VB MOSFET Product Introduction
DTK14N50SJ-VB is a high-voltage single N-channel MOSFET packaged in TO263, especially suitable for high voltage applications. The device has a drain-source voltage (VDS) of 500V and a gate-source voltage (VGS) of ±30V, and uses SJ_Multi-EPI technology to achieve excellent switching performance and low on-resistance. The threshold voltage (Vth) of the MOSFET is 3.5V, the maximum on-resistance (RDS(ON)) is 290mΩ at VGS=10V, and the maximum drain current (ID) is 14A. These features enable it to perform well in high voltage and high power applications.
DTK14N50SJ-VB is a high-voltage single N-channel MOSFET packaged in TO263, especially suitable for high voltage applications. The device has a drain-source voltage (VDS) of 500V and a gate-source voltage (VGS) of ±30V, and uses SJ_Multi-EPI technology to achieve excellent switching performance and low on-resistance. The threshold voltage (Vth) of the MOSFET is 3.5V, the maximum on-resistance (RDS(ON)) is 290mΩ at VGS=10V, and the maximum drain current (ID) is 14A. These features enable it to perform well in high voltage and high power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 500V | 3.5V | 14A | 290mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 500V | 3.5V | 14A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 500V | 3.5V | 14A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- The TO263 package is a surface mount package with good heat dissipation and current carrying capacity, suitable for medium and high power applications.
- **Configuration**: Single N-channel
- Single N-channel MOSFET, suitable for use as a switching device or power amplifier, with good conduction performance and low on-resistance.
- **Drain-source voltage (VDS)**: 500V
- The device can withstand voltages up to 500V, suitable for high voltage applications.
- **Gate-source voltage (VGS)**: ±30V
- The maximum voltage that the gate can withstand is ±30V, suitable for a wide range of drive voltages.
- **Threshold voltage (Vth)**: 3.5V
- At VGS=3.5V, the MOSFET starts to turn on, suitable for medium voltage control signal applications.
- **On-resistance (RDS(ON))**:
- **VGS=10V**: 290mΩ
- Moderate on-resistance helps reduce power loss, but for some high voltage applications, lower on-resistance may be required to improve efficiency.
- **Drain current (ID)**: 14A
- Maximum drain current is 14A, suitable for medium and high power load applications.
- **Technology**: SJ_Multi-EPI
- SJ_Multi-EPI technology provides high voltage withstand capability and excellent switching characteristics, suitable for high voltage and high power circuit design.
- **Package type**: TO263
- The TO263 package is a surface mount package with good heat dissipation and current carrying capacity, suitable for medium and high power applications.
- **Configuration**: Single N-channel
- Single N-channel MOSFET, suitable for use as a switching device or power amplifier, with good conduction performance and low on-resistance.
- **Drain-source voltage (VDS)**: 500V
- The device can withstand voltages up to 500V, suitable for high voltage applications.
- **Gate-source voltage (VGS)**: ±30V
- The maximum voltage that the gate can withstand is ±30V, suitable for a wide range of drive voltages.
- **Threshold voltage (Vth)**: 3.5V
- At VGS=3.5V, the MOSFET starts to turn on, suitable for medium voltage control signal applications.
- **On-resistance (RDS(ON))**:
- **VGS=10V**: 290mΩ
- Moderate on-resistance helps reduce power loss, but for some high voltage applications, lower on-resistance may be required to improve efficiency.
- **Drain current (ID)**: 14A
- Maximum drain current is 14A, suitable for medium and high power load applications.
- **Technology**: SJ_Multi-EPI
- SJ_Multi-EPI technology provides high voltage withstand capability and excellent switching characteristics, suitable for high voltage and high power circuit design.
Domain and module applications：
Applicable fields and module applications
DTK14N50SJ-VB MOSFET is very suitable for high-voltage power management and power conversion modules due to its high voltage tolerance and relatively low on-resistance. In power electronic devices such as switching power supplies, inverters, and motor drives, the DTK14N50SJ-VB can be used as a high-voltage switch for efficient power conversion and regulation.
In industrial automation systems, this MOSFET can also be used in high-voltage control and protection circuits, such as providing stable switching operation and overcurrent protection in motor control and power regulation modules. In addition, in household appliances and power tools, it can effectively handle high-voltage loads to ensure the safety and reliability of the equipment.
In general, the DTK14N50SJ-VB is a powerful and high-voltage MOSFET that can meet the needs of high-voltage, high-power applications and is suitable for a variety of high-voltage and high-power scenarios.
DTK14N50SJ-VB MOSFET is very suitable for high-voltage power management and power conversion modules due to its high voltage tolerance and relatively low on-resistance. In power electronic devices such as switching power supplies, inverters, and motor drives, the DTK14N50SJ-VB can be used as a high-voltage switch for efficient power conversion and regulation.
In industrial automation systems, this MOSFET can also be used in high-voltage control and protection circuits, such as providing stable switching operation and overcurrent protection in motor control and power regulation modules. In addition, in household appliances and power tools, it can effectively handle high-voltage loads to ensure the safety and reliability of the equipment.
In general, the DTK14N50SJ-VB is a powerful and high-voltage MOSFET that can meet the needs of high-voltage, high-power applications and is suitable for a variety of high-voltage and high-power scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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