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DOD50N06TR-VB Product details
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Product Introduction
DOD50N06TR-VB is a high-performance N-channel MOSFET in TO252 package. This MOSFET is manufactured using Trench technology and is designed for high current and high efficiency applications. It has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, suitable for a variety of power management and load switching applications. DOD50N06TR-VB has extremely low on-resistance of 13mΩ and 10mΩ respectively, which ensures low power consumption and high efficiency under high current conditions at different gate-source voltages.
DOD50N06TR-VB is a high-performance N-channel MOSFET in TO252 package. This MOSFET is manufactured using Trench technology and is designed for high current and high efficiency applications. It has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, suitable for a variety of power management and load switching applications. DOD50N06TR-VB has extremely low on-resistance of 13mΩ and 10mΩ respectively, which ensures low power consumption and high efficiency under high current conditions at different gate-source voltages.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: DOD50N06TR-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 58A
- **Technology**: Trench
- **Model**: DOD50N06TR-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 58A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
The low on-resistance and high current handling capability of the DOD50N06TR-VB MOSFET enable it to excel in a variety of applications, including:
1. **DC-DC Converters**: In DC-DC converters, the DOD50N06TR-VB can significantly reduce switching losses and power losses due to its low RDS(ON) characteristics. This makes it an ideal choice for computer power supplies, automotive power management, and other high-efficiency power conversion applications.
2. **Power Management Modules**: This MOSFET is suitable for power management modules to control and regulate power output. Its high current handling capability and low on-resistance ensure stable system operation and improve overall power efficiency.
3. **Motor Drive Circuits**: The high current capability and low on-resistance of the DOD50N06TR-VB make it ideal for motor drive circuits, especially in applications that require high current and high efficiency, such as power tools, electric vehicles, and industrial motor control systems.
4. **Battery protection circuit**: In battery management systems, this MOSFET can be used as a load switch to help protect the battery from overcurrent, short circuit and other problems. Its high current handling capability and low power consumption make it excellent in battery protection and management.
These features make the DOD50N06TR-VB an indispensable component in modern electronic devices, especially in applications that require high performance and high current handling.
The low on-resistance and high current handling capability of the DOD50N06TR-VB MOSFET enable it to excel in a variety of applications, including:
1. **DC-DC Converters**: In DC-DC converters, the DOD50N06TR-VB can significantly reduce switching losses and power losses due to its low RDS(ON) characteristics. This makes it an ideal choice for computer power supplies, automotive power management, and other high-efficiency power conversion applications.
2. **Power Management Modules**: This MOSFET is suitable for power management modules to control and regulate power output. Its high current handling capability and low on-resistance ensure stable system operation and improve overall power efficiency.
3. **Motor Drive Circuits**: The high current capability and low on-resistance of the DOD50N06TR-VB make it ideal for motor drive circuits, especially in applications that require high current and high efficiency, such as power tools, electric vehicles, and industrial motor control systems.
4. **Battery protection circuit**: In battery management systems, this MOSFET can be used as a load switch to help protect the battery from overcurrent, short circuit and other problems. Its high current handling capability and low power consumption make it excellent in battery protection and management.
These features make the DOD50N06TR-VB an indispensable component in modern electronic devices, especially in applications that require high performance and high current handling.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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