Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
|
8mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Package type**: SOP8
- SOP8 package is a small 8-pin surface mount package, suitable for circuit design that needs to save space.
- **Configuration**: Single N-channel
- Single N-channel MOSFET is suitable for use as a switching device or amplifier, with low on-resistance and high-efficiency switching performance.
- **Drain-source voltage (VDS)**: 30V
- The device can withstand a voltage difference of up to 30V, suitable for medium and low voltage circuit applications.
- **Gate-source voltage (VGS)**: ±20V
- The maximum voltage that the gate can withstand is ±20V, which is suitable for a wide range of driving voltages.
- **Threshold voltage (Vth)**: 1.7V
- The device starts to conduct when VGS=1.7V, indicating that it has a lower startup voltage for the control signal.
- **On-resistance (RDS(ON))**:
- **VGS=4.5V**: 11mΩ
- **VGS=10V**: 8mΩ
- Low on-resistance helps reduce power loss and improve overall circuit efficiency.
- **Drain current (ID)**: 13A
- Maximum drain current is 13A, suitable for medium power load applications.
- **Technology**: Trench
- Trench technology provides lower on-resistance and excellent switching characteristics, suitable for high-efficiency circuit design.
Domain and module applications：
Applicable fields and module applications
DMS3016SSSA-VB MOSFET is very suitable for power management modules such as DC-DC converters and voltage regulators due to its low on-resistance and moderate current handling capability. In these modules, the high switching efficiency of MOSFET helps to improve the overall energy efficiency and stability of the system.
In addition, this MOSFET is also suitable for motor drive circuits, especially in applications that require high efficiency and fast switching response, such as power tools, electric vehicles, and household appliances. In consumer electronics, such as laptops and smartphones, DMS3016SSSA-VB can be used for battery management and power switching, helping to achieve efficient energy management and extend the use time of equipment.
In short, DMS3016SSSA-VB is a versatile, high-efficiency N-channel MOSFET suitable for a variety of application scenarios that require high switching efficiency and low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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