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DMP4015SK3Q-13-VB Product details
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DMP4015SK3Q-13-VB MOSFET Product Introduction
The DMP4015SK3Q-13-VB is a high-performance P-channel MOSFET suitable for a variety of power management applications. It uses a TO-252 package to provide a compact solution with excellent thermal performance and electrical characteristics. The device has a maximum drain-source voltage (VDS) of -40V, suitable for low-voltage applications. The use of Trench technology enables its on-resistance (RDS(ON)) to be 13mΩ at a gate-source voltage (VGS) of 4.5V and RDS(ON) to be 6.8mΩ at a VGS of 10V, thereby achieving efficient switching and reducing power consumption. This MOSFET can withstand a continuous drain current (ID) of up to -90A, suitable for high-current applications.
The DMP4015SK3Q-13-VB is a high-performance P-channel MOSFET suitable for a variety of power management applications. It uses a TO-252 package to provide a compact solution with excellent thermal performance and electrical characteristics. The device has a maximum drain-source voltage (VDS) of -40V, suitable for low-voltage applications. The use of Trench technology enables its on-resistance (RDS(ON)) to be 13mΩ at a gate-source voltage (VGS) of 4.5V and RDS(ON) to be 6.8mΩ at a VGS of 10V, thereby achieving efficient switching and reducing power consumption. This MOSFET can withstand a continuous drain current (ID) of up to -90A, suitable for high-current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -90A | 6.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
1. **Package**: TO-252
- Surface mount package with low thermal resistance and compact form factor.
2. **Configuration**: Single P-channel
- The device has a single P-channel and is suitable for applications where a negative voltage is applied to the gate relative to the source.
3. **Drain-Source Voltage (VDS)**: -40V
- The maximum voltage that can be applied between the drain and source.
4. **Gate-Source Voltage (VGS)**: ±20V
- The maximum voltage that can be applied between the gate and source.
5. **Threshold Voltage (Vth)**: -2V
- The voltage at which the MOSFET starts to conduct.
6. **On-resistance (RDS(ON))**:
- **13mΩ at 4.5V**
- **6.8mΩ at 10V**
- The resistance between the drain and source when the MOSFET is fully turned on.
7. **Continuous leakage current (ID)**: -90A
- The maximum continuous current that the MOSFET can withstand.
8. **Technology**: Trench
- A technology that allows low on-resistance and high current capability.
1. **Package**: TO-252
- Surface mount package with low thermal resistance and compact form factor.
2. **Configuration**: Single P-channel
- The device has a single P-channel and is suitable for applications where a negative voltage is applied to the gate relative to the source.
3. **Drain-Source Voltage (VDS)**: -40V
- The maximum voltage that can be applied between the drain and source.
4. **Gate-Source Voltage (VGS)**: ±20V
- The maximum voltage that can be applied between the gate and source.
5. **Threshold Voltage (Vth)**: -2V
- The voltage at which the MOSFET starts to conduct.
6. **On-resistance (RDS(ON))**:
- **13mΩ at 4.5V**
- **6.8mΩ at 10V**
- The resistance between the drain and source when the MOSFET is fully turned on.
7. **Continuous leakage current (ID)**: -90A
- The maximum continuous current that the MOSFET can withstand.
8. **Technology**: Trench
- A technology that allows low on-resistance and high current capability.
Domain and module applications：
Application Examples
The DMP4015SK3Q-13-VB MOSFET is suitable for a variety of applications, including:
1. **Power Management in Automotive Systems**:
- This MOSFET can be used in automotive power and motor control circuits, where high current handling and efficient switching are critical. It is capable of handling currents up to -90A, making it suitable for high-power automotive applications such as electric power steering systems and engine control units (ECUs).
2. **DC-DC Converters**:
- Low RDS(ON) values ensure minimal power loss, making the DMP4015SK3Q-13-VB suitable for use in DC-DC converters, especially power regulation circuits such as point-to-point (POL) converters, battery management systems, etc.
3. **Battery Protection Circuits**:
- Due to its P-channel configuration and high current handling capability, this MOSFET is ideal for battery protection circuits, especially in portable devices and electric vehicles, where safe and efficient power management is required.
4. **Industrial Power Supplies**:
- In industrial environments, this MOSFET can be used in power supply units (PSUs) for machines and equipment that require robust and reliable power delivery. Trench technology ensures that the MOSFET can operate efficiently under demanding conditions.
The versatility and excellent performance of this MOSFET make it an ideal choice for a wide range of applications in power management and control.
The DMP4015SK3Q-13-VB MOSFET is suitable for a variety of applications, including:
1. **Power Management in Automotive Systems**:
- This MOSFET can be used in automotive power and motor control circuits, where high current handling and efficient switching are critical. It is capable of handling currents up to -90A, making it suitable for high-power automotive applications such as electric power steering systems and engine control units (ECUs).
2. **DC-DC Converters**:
- Low RDS(ON) values ensure minimal power loss, making the DMP4015SK3Q-13-VB suitable for use in DC-DC converters, especially power regulation circuits such as point-to-point (POL) converters, battery management systems, etc.
3. **Battery Protection Circuits**:
- Due to its P-channel configuration and high current handling capability, this MOSFET is ideal for battery protection circuits, especially in portable devices and electric vehicles, where safe and efficient power management is required.
4. **Industrial Power Supplies**:
- In industrial environments, this MOSFET can be used in power supply units (PSUs) for machines and equipment that require robust and reliable power delivery. Trench technology ensures that the MOSFET can operate efficiently under demanding conditions.
The versatility and excellent performance of this MOSFET make it an ideal choice for a wide range of applications in power management and control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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