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DMP4015SK3-13-VB Product details
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DMP4015SK3-13-VB MOSFET Product Introduction
The DMP4015SK3-13-VB is a high-performance single P-channel MOSFET in TO252 package, suitable for applications requiring low on-resistance and high current handling capability. It has a drain-source voltage (VDS) of -40V and a gate-source voltage (VGS) of ±20V, and uses advanced Trench technology to provide excellent switching characteristics and power density. The turn-on voltage (Vth) of this MOSFET is -2V, the maximum on-resistance (RDS(ON)) is 13mΩ at VGS=4.5V and 6.8mΩ at VGS=10V, and the maximum drain current (ID) allowed is -90A.
The DMP4015SK3-13-VB is a high-performance single P-channel MOSFET in TO252 package, suitable for applications requiring low on-resistance and high current handling capability. It has a drain-source voltage (VDS) of -40V and a gate-source voltage (VGS) of ±20V, and uses advanced Trench technology to provide excellent switching characteristics and power density. The turn-on voltage (Vth) of this MOSFET is -2V, the maximum on-resistance (RDS(ON)) is 13mΩ at VGS=4.5V and 6.8mΩ at VGS=10V, and the maximum drain current (ID) allowed is -90A.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -90A | 6.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Package type**: TO252
- The TO252 package is a surface mount package with low thermal resistance and high current handling capability, suitable for compact circuit design.
- **Configuration**: Single P-channel
- This means that there is only one P-channel MOSFET inside the device, suitable for use as a switch or low-end load switch.
- **Drain-source voltage (VDS)**: -40V
- The device can withstand a voltage difference of up to -40V, suitable for medium voltage applications.
- **Gate-source voltage (VGS)**: ±20V
- The maximum voltage that the gate can withstand is ±20V, suitable for a wide range of drive voltages.
- **Threshold voltage (Vth)**: -2V
- The device starts to conduct when VGS=-2V, indicating that it is sensitive to low-voltage control signals.
- **On-resistance (RDS(ON))**:
- **VGS=4.5V**: 13mΩ
- **VGS=10V**: 6.8mΩ
- The lower the on-resistance, the lower the loss, which is particularly suitable for high-efficiency power management.
- **Drain current (ID)**: -90A
- This MOSFET can handle currents up to -90A, suitable for high-power applications.
- **Technology**: Trench
- Trench technology enables the device to have lower on-resistance and higher efficiency at high currents, suitable for high-frequency switching circuits.
- **Package type**: TO252
- The TO252 package is a surface mount package with low thermal resistance and high current handling capability, suitable for compact circuit design.
- **Configuration**: Single P-channel
- This means that there is only one P-channel MOSFET inside the device, suitable for use as a switch or low-end load switch.
- **Drain-source voltage (VDS)**: -40V
- The device can withstand a voltage difference of up to -40V, suitable for medium voltage applications.
- **Gate-source voltage (VGS)**: ±20V
- The maximum voltage that the gate can withstand is ±20V, suitable for a wide range of drive voltages.
- **Threshold voltage (Vth)**: -2V
- The device starts to conduct when VGS=-2V, indicating that it is sensitive to low-voltage control signals.
- **On-resistance (RDS(ON))**:
- **VGS=4.5V**: 13mΩ
- **VGS=10V**: 6.8mΩ
- The lower the on-resistance, the lower the loss, which is particularly suitable for high-efficiency power management.
- **Drain current (ID)**: -90A
- This MOSFET can handle currents up to -90A, suitable for high-power applications.
- **Technology**: Trench
- Trench technology enables the device to have lower on-resistance and higher efficiency at high currents, suitable for high-frequency switching circuits.
Domain and module applications：
Applicable fields and module applications
The DMP4015SK3-13-VB MOSFET is particularly suitable for power management modules and DC-DC converters due to its low on-resistance and high current handling capability. In these modules, MOSFET can be used as a load switch to help achieve efficient power transmission and conversion. In addition, it also performs well in motor drive circuits, especially suitable for applications requiring fast switching and high current, such as electric vehicles, drones and robots.
In communication equipment, this MOSFET can be used in voltage regulation and power amplifier circuits to ensure stable performance of the device in different operating modes. It is also suitable for battery management systems in consumer electronics, providing reliable overcurrent protection and power regulation functions. In short, the DMP4015SK3-13-VB is a versatile MOSFET that can meet the needs of a variety of high-efficiency and high-power applications.
The DMP4015SK3-13-VB MOSFET is particularly suitable for power management modules and DC-DC converters due to its low on-resistance and high current handling capability. In these modules, MOSFET can be used as a load switch to help achieve efficient power transmission and conversion. In addition, it also performs well in motor drive circuits, especially suitable for applications requiring fast switching and high current, such as electric vehicles, drones and robots.
In communication equipment, this MOSFET can be used in voltage regulation and power amplifier circuits to ensure stable performance of the device in different operating modes. It is also suitable for battery management systems in consumer electronics, providing reliable overcurrent protection and power regulation functions. In short, the DMP4015SK3-13-VB is a versatile MOSFET that can meet the needs of a variety of high-efficiency and high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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