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DMP2160UW-7-VB Product details

Product introduction:

Product Introduction



**DMP2160UW-7-VB** is a unipolar P-Channel MOSFET in an SC70-3 package designed for low voltage, high efficiency switching applications. It supports a drain to source voltage (VDS) of up to -20V and can withstand a gate to source voltage (VGS) of ±12V. With advanced Trench technology, the device provides a low on-resistance of 80mΩ at VGS=4.5V, an on-resistance of 100mΩ at VGS=2.5V, and a maximum drain current (ID) of -3.1A. The DMP2160UW-7-VB is suitable for applications that require high efficiency switching and small packaging, especially in space-constrained electronic devices.



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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SC70-3 Single-P -20V -0.6V -3.1A 100mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SC70-3 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SC70-3 Single-P -20V -0.6V -3.1A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SC70-3 Single-P -20V -0.6V -3.1A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SC70-3 Single-P
Detailed parameter description



- **Model**: DMP2160UW-7-VB

- **Package**: SC70-3

- **Configuration**: Unipolar P-Channel

- **Maximum drain to source voltage (VDS)**: -20V

- **Maximum gate to source voltage (VGS)**: ±12V

- **Threshold voltage (Vth)**: -0.6V

- **On-resistance (RDS(ON))**:

- 100mΩ @ VGS=2.5V

- 80mΩ @ VGS=4.5V

- **Maximum drain current (ID)**: -3.1A

- **Technology**: Trench



Domain and module applications:

Application fields and module examples



**DMP2160UW-7-VB** is suitable for a variety of applications, especially in miniaturized design and low voltage control:



1. **Power management of portable devices**:

- The low on-resistance and small package of this MOSFET make it suitable for use in power management modules in portable devices such as smartphones and tablets. These devices require efficient switching to extend battery life while achieving high performance in a limited space.



2. **DC-DC converter**:

- In low-power DC-DC converters, the DMP2160UW-7-VB can be used as a high-efficiency switching device. Its low RDS(ON) ensures low power consumption and high efficiency in power conversion, and is suitable for powering processors or other low-voltage circuits.



3. **Load switch**:

- Due to its compact package and excellent electrical characteristics, this MOSFET is ideal for load switching in small electronic devices. It can reliably control the current flow into key components of the device, such as sensors, memory, and low-power communication modules.



4. **Battery Protection Circuit**:

- DMP2160UW-7-VB performs well in battery protection circuits, preventing overcurrent and overvoltage conditions. Its efficient switching characteristics and low on-resistance ensure the safety and long life of the battery pack.



5. **Signal Conditioning Circuit**:

- In the signal conditioning circuit, this MOSFET can be used to switch signal paths or adjust signal levels. Due to its low noise and low power consumption, it is suitable for precision electronic systems that require high signal integrity.



**DMP2160UW-7-VB** The application in the above fields not only optimizes the circuit design, but also significantly improves the overall efficiency and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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