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DMN6070SSD-VB Product details

Product introduction:

Product Introduction



**DMN6070SSD-VB** is a dual N-type MOSFET in SOP8 package, using Trench technology, designed for medium to high voltage and current applications. This MOSFET has a maximum drain-source voltage (V_DS) of 60V and a maximum continuous drain current (I_D) of 7A, providing stable performance and high efficiency. The threshold voltage (V_th) is 1.7V, which enables it to work effectively at low gate-source voltage. The on-resistance (R_DS(on)) is 30mΩ and 28mΩ at V_GS of 4.5V and 10V respectively, ensuring efficient switching performance and low power consumption.



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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+N 60V 1.7V 7A 28mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+N 60V 1.7V 7A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+N 60V 1.7V 7A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+N
Detailed parameter description



- **Model**: DMN6070SSD-VB

- **Package**: SOP8

- **Configuration**: Dual N-type MOSFET (two N-Channel)

- **Maximum drain-source voltage (V_DS)**: 60V

- **Gate-source voltage (V_GS)**: ±20V

- **Threshold voltage (V_th)**: 1.7V

- **On-resistance (R_DS(on))**:

- 30mΩ @ V_GS = 4.5V

- 28mΩ @ V_GS = 10V

- **Maximum continuous leakage current (I_D)**: 7A

- **Technology**: Trench



Domain and module applications:

Applications and Modules



1. **Power Management**:

The DMN6070SSD-VB is suitable for various power management applications such as DC-DC converters and power switches. Its low on-resistance and high current capability enable it to effectively handle high current loads while reducing power consumption and heat generation. Especially in power conversion and regulation, it can provide stable performance and high efficiency.



2. **Electric Vehicles and Battery Management**:

In electric vehicles and battery management systems, this MOSFET can be used in battery protection circuits and motor drivers. Its 60V drain-source voltage and 7A current capability are suitable for handling high voltage and high current applications in electric vehicle systems, ensuring system reliability and safety.



3. **Industrial Control Systems**:

The DMN6070SSD-VB is also suitable for load switches and power regulators in industrial control systems. Its high current handling capability and low R_DS(on) characteristics enable it to support switching and control tasks in various industrial applications, improving system stability and efficiency.



4. **Home Appliances**:

In home appliances, such as refrigerators, washing machines, and air conditioners, the DMN6070SSD-VB can be used to control motors and heating elements. Its high current capability and low power consumption help improve the performance and energy efficiency of the equipment.



5. **Computers and Communication Devices**:

This MOSFET is suitable for switching and power management modules in computers and communication devices. In these devices, the DMN6070SSD-VB can handle signal switching and power regulation, supporting stable operation and high efficiency of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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