DMN5L06DMK-7-VB Product details
Product introduction:
**DMN5L06DMK-7-VB** is a dual N-channel MOSFET packaged in SOT23-6. It has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) tolerance of ±20V, suitable for a variety of medium and low voltage power switching applications. The DMN5L06DMK-7-VB, manufactured using Trench technology, is designed to provide reliable current control in a limited space, and is particularly suitable for applications with limited space and medium power requirements. Its 1.7V threshold voltage (Vth) ensures stable conduction even at lower gate-source voltages, suitable for circuit designs that require high density and high efficiency.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 60V | 1.7V | 0.35A | 1800mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 60V | 1.7V | 0.35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 60V | 1.7V | 0.35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
- **Model**: DMN5L06DMK-7-VB
- **Package**: SOT23-6
- **Configuration**: Dual N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3000mΩ @ VGS = 4.5V
- 1800mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 0.35A
- **Technology**: Trench
Domain and module applications:
**1. Power switch for portable devices: **
The DMN5L06DMK-7-VB is ideal for power switches in portable devices such as mobile phones, tablets, and other handheld devices. Its compact SOT23-6 package and low on-resistance enable it to effectively control current in a limited space, optimizing the power consumption and performance of the device.
**2. Small power management module: **
In small power management modules, this MOSFET can be used for switching power supplies and DC-DC converters. Its high drain-source voltage (VDS) and moderate on-resistance ensure efficient current control, suitable for applications requiring medium power conversion and management.
**3. Low-power circuit protection: **
In low-power circuit protection systems, the DMN5L06DMK-7-VB can be used for overcurrent protection and load switching. Its high current handling capability and low threshold voltage make it perform well in circuit protection, effectively managing current and protecting circuits from overload damage.
**4. Industrial control systems: **
In industrial control systems, this MOSFET can be used in switch control circuits such as relay drivers and signal switches. Its reliability and stability ensure stable performance in various industrial applications and is suitable for environments requiring high durability.
Technical support:
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