DMN4040SK3-13-VB Product details
Product introduction:
**DMN4040SK3-13-VB** is an N-Channel MOSFET in TO252 package with 40V drain-source voltage (VDS) and up to 55A continuous drain current (ID) capability. This MOSFET uses Trench technology to provide extremely low on-resistance (RDS(ON)), ensuring high efficiency and low power consumption. Its threshold voltage (Vth) is 2.5V, which enables it to work effectively under different drive voltages, making it very suitable for high-performance switching and power management applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package**: TO252
- **Configuration**: Unipolar N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 14mΩ (at VGS=4.5V)
- 12mΩ (at VGS=10V)
- **Maximum continuous leakage current (ID)**: 55A
- **Technology**: Trench
Domain and module applications:
**DMN4040SK3-13-VB** MOSFET is suitable for a variety of fields, especially in applications that require high efficiency and high current handling capabilities:
1. **Power management and DC-DC converters**:
- This MOSFET can be used in DC-DC converters and voltage regulators, especially for applications that require high current handling capabilities. Its low on-resistance can significantly reduce power consumption and improve system efficiency, making it very suitable for use in power supply modules and embedded power management systems.
2. **Load switch and battery management**:
- In portable devices and battery-powered applications, the DMN4040SK3-13-VB can provide stable and efficient switching performance as a load switch, suitable for devices such as smartphones, tablets, laptops, etc., to optimize battery life and increase device endurance.
3. **Motor Drive and Consumer Electronics**:
- The DMN4040SK3-13-VB is suitable for motor drive systems such as power tools, drones, and electric toys that require precise current control. It can handle large currents to ensure stable operation of the equipment, and its low RDS(ON) improves the response speed and energy efficiency of the motor.
4. **Automotive Electronics**:
- This MOSFET also performs well in automotive electronic systems and is suitable for low-voltage switching applications such as power windows, seat adjusters, and fan control. Its high current handling capability and low on-resistance help improve the overall stability and efficiency of automotive electronic systems.
In summary, **DMN4040SK3-13-VB** is a high-performance N-Channel MOSFET that is widely used in power management, load switching, motor drive, and automotive electronics. Its low power consumption and high efficiency enable it to effectively improve system performance in a variety of applications.
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