Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC75-3 |
Single-N |
20V |
|
0.5~1.5V |
0.85A |
390mΩ |
|
|
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC75-3 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SC75-3 |
Single-N |
20V |
|
0.5~1.5V |
0.85A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SC75-3 |
Single-N |
20V |
|
0.5~1.5V |
0.85A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC75-3 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: DMN313DLT-VB
- **Package**: SC75-3
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Gate threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 390mΩ @ VGS = 2.5V
- 270mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 0.85A
- **Technology**: Trench technology
Domain and module applications:
Application fields and module examples
**1. Portable electronic devices**: The SC75-3 package of DMN313DLT-VB makes it ideal for space-constrained portable electronic devices such as smartphones, watches and portable sensors. These devices require efficient power management in a limited space, and the low on-resistance and small package of DMN313DLT-VB meet this need.
**2. Power management modules**: In low-power power management modules, this MOSFET can effectively improve efficiency, such as in low-power DC-DC converters and power switching circuits. Its moderate on-resistance and high current carrying capacity enable it to provide stable performance and low power consumption in small power management systems.
**3. Small switching circuits**: DMN313DLT-VB is also suitable for a variety of small switching circuits, such as low-power switch mode power supplies (SMPS) and load switches. Reliable switching control is required in these applications, and DMN313DLT-VB can provide stable switching performance at lower gate-source voltages, thereby optimizing the overall efficiency of the circuit.
**4. Low-power signal control**: In low-power signal control circuits, such as sensor interfaces and small communication modules, the low gate threshold voltage and small package of this MOSFET can ensure efficient operation of the circuit and reduce energy loss. Its high efficiency and small size are very suitable for applications that need to save space and power.
The design and performance of the DMN313DLT-VB MOSFET enable it to excel in multiple low-power, high-density electronic applications, demonstrating its key role in improving system efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours