中文
English
DMN3024LK3-13-VB Product details
Back to previous pageProduct introduction：
Product Introduction
**DMN3024LK3-13-VB** is a high-performance unipolar N-channel MOSFET in a TO252 package designed for medium and low voltage switching applications. The device has a maximum drain-to-source voltage (VDS) of up to 30V, making it suitable for use in applications that require higher current transfer efficiency. It utilizes Trench technology to provide extremely low on-resistance to ensure efficient current transfer. At VGS=10V, its on-resistance (RDS(ON)) is only 7mΩ, and at VGS=4.5V it is only 9mΩ, indicating that it can still maintain excellent performance at low voltage. The MOSFET also supports a drain current (ID) of up to 70A, making it suitable for use in scenarios that require high current transmission.
**DMN3024LK3-13-VB** is a high-performance unipolar N-channel MOSFET in a TO252 package designed for medium and low voltage switching applications. The device has a maximum drain-to-source voltage (VDS) of up to 30V, making it suitable for use in applications that require higher current transfer efficiency. It utilizes Trench technology to provide extremely low on-resistance to ensure efficient current transfer. At VGS=10V, its on-resistance (RDS(ON)) is only 7mΩ, and at VGS=4.5V it is only 9mΩ, indicating that it can still maintain excellent performance at low voltage. The MOSFET also supports a drain current (ID) of up to 70A, making it suitable for use in scenarios that require high current transmission.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: DMN3024LK3-13-VB
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Maximum drain to source voltage (VDS)**: 30V
- **Maximum gate to source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ (VGS=4.5V)
- 7mΩ (VGS=10V)
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench
- **Model**: DMN3024LK3-13-VB
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Maximum drain to source voltage (VDS)**: 30V
- **Maximum gate to source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ (VGS=4.5V)
- 7mΩ (VGS=10V)
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
**DMN3024LK3-13-VB** MOSFET is highly applicable in a variety of application scenarios, especially in systems that require efficient current transmission and low power consumption:
1. **DC-DC converter**:
- This MOSFET can be used as an efficient switching element in a DC-DC converter. Its low RDS(ON) and high current carrying capacity enable it to achieve efficient current control in various voltage conversion circuits, helping to reduce power loss and improve conversion efficiency.
2. **Power management module**:
- In power management systems, DMN3024LK3-13-VB can be used for switching regulators or load switches. Its low on-resistance ensures efficient power transmission under high current conditions. Its high current carrying capacity makes it suitable for applications that require high current supply, such as server power supplies or industrial power management.
3. **Battery Protection Circuit**:
- The DMN3024LK3-13-VB is suitable for use in protection circuits for lithium battery packs. Its high current capability and low RDS(ON) help achieve low power consumption and efficient current transfer in battery protection to prevent battery overcurrent and short circuit.
4. **Motor Drive**:
- In motor drive applications, this MOSFET can be used to control the start-up and speed regulation of DC motors. Its low on-resistance and high current carrying capability make it suitable for motor control systems that require precise current control and reduced power consumption.
5. **LED Driver**:
- In LED drive applications, the DMN3024LK3-13-VB can be used in switching circuits to achieve dimming control of LED lighting. Its low on-resistance ensures efficient current transfer, helping to improve the overall efficiency of the LED driver.
Through these application examples, it can be seen that the **DMN3024LK3-13-VB** is a very suitable MOSFET device in scenarios that require efficient current control, low power consumption and high current carrying capability.
**DMN3024LK3-13-VB** MOSFET is highly applicable in a variety of application scenarios, especially in systems that require efficient current transmission and low power consumption:
1. **DC-DC converter**:
- This MOSFET can be used as an efficient switching element in a DC-DC converter. Its low RDS(ON) and high current carrying capacity enable it to achieve efficient current control in various voltage conversion circuits, helping to reduce power loss and improve conversion efficiency.
2. **Power management module**:
- In power management systems, DMN3024LK3-13-VB can be used for switching regulators or load switches. Its low on-resistance ensures efficient power transmission under high current conditions. Its high current carrying capacity makes it suitable for applications that require high current supply, such as server power supplies or industrial power management.
3. **Battery Protection Circuit**:
- The DMN3024LK3-13-VB is suitable for use in protection circuits for lithium battery packs. Its high current capability and low RDS(ON) help achieve low power consumption and efficient current transfer in battery protection to prevent battery overcurrent and short circuit.
4. **Motor Drive**:
- In motor drive applications, this MOSFET can be used to control the start-up and speed regulation of DC motors. Its low on-resistance and high current carrying capability make it suitable for motor control systems that require precise current control and reduced power consumption.
5. **LED Driver**:
- In LED drive applications, the DMN3024LK3-13-VB can be used in switching circuits to achieve dimming control of LED lighting. Its low on-resistance ensures efficient current transfer, helping to improve the overall efficiency of the LED driver.
Through these application examples, it can be seen that the **DMN3024LK3-13-VB** is a very suitable MOSFET device in scenarios that require efficient current control, low power consumption and high current carrying capability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
