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DMN3005LK3-13-VB Product details
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Product Introduction
**DMN3005LK3-13-VB** is a single N-type MOSFET in TO252 package, using high-performance Trench technology. Designed for high-current, high-efficiency switching applications, this MOSFET has a maximum drain-source voltage (V_DS) of 30V and a maximum continuous drain current (I_D) of up to 100A. Its threshold voltage (V_th) is 1.7V, ensuring reliable switching operation even at lower gate-source voltages. The on-resistance (R_DS(on)) is 3mΩ and 2mΩ at V_GS of 4.5V and 10V, respectively, significantly reducing power consumption and heat loss, making it an excellent performer in high-efficiency applications.
**DMN3005LK3-13-VB** is a single N-type MOSFET in TO252 package, using high-performance Trench technology. Designed for high-current, high-efficiency switching applications, this MOSFET has a maximum drain-source voltage (V_DS) of 30V and a maximum continuous drain current (I_D) of up to 100A. Its threshold voltage (V_th) is 1.7V, ensuring reliable switching operation even at lower gate-source voltages. The on-resistance (R_DS(on)) is 3mΩ and 2mΩ at V_GS of 4.5V and 10V, respectively, significantly reducing power consumption and heat loss, making it an excellent performer in high-efficiency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: DMN3005LK3-13-VB
- **Package**: TO252
- **Configuration**: Single N-type MOSFET
- **Maximum drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(on))**:
- 3mΩ @ V_GS = 4.5V
- 2mΩ @ V_GS = 10V
- **Maximum continuous leakage current (I_D)**: 100A
- **Technology**: Trench
- **Model**: DMN3005LK3-13-VB
- **Package**: TO252
- **Configuration**: Single N-type MOSFET
- **Maximum drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(on))**:
- 3mΩ @ V_GS = 4.5V
- 2mΩ @ V_GS = 10V
- **Maximum continuous leakage current (I_D)**: 100A
- **Technology**: Trench
Domain and module applications：
Applications and Modules
1. **Power Management**:
The high current handling capability and low on-resistance of the DMN3005LK3-13-VB make it ideal for use in power management systems. Especially in DC-DC converters and high-efficiency power modules, it can provide stable current and reduce power consumption, improving the efficiency and reliability of the power system.
2. **Motor Drive**:
Due to its high current capability and low heat loss, this MOSFET performs well in motor drive applications. It can be used in motor control units to provide efficient current switching and control, ensuring smooth operation of the motor.
3. **Industrial Control**:
In industrial control systems, the DMN3005LK3-13-VB can be used in a variety of high-power switching applications. Its high current handling capability and low on-resistance make it suitable for industrial applications such as motor drive, power protection, and load switching, ensuring stable performance in harsh environments.
4. **Automotive Electronics**:
This MOSFET is suitable for power management and switch control applications in automotive electronic systems. It can be used for power windows, power seats and other high-power automotive components to provide efficient and reliable switching control.
5. **Consumer Electronics**:
In consumer electronic devices, the DMN3005LK3-13-VB can be used for power management and load switching, such as laptops and high-power tablets. Its high efficiency and low power consumption can improve the overall performance and battery life of the device.
1. **Power Management**:
The high current handling capability and low on-resistance of the DMN3005LK3-13-VB make it ideal for use in power management systems. Especially in DC-DC converters and high-efficiency power modules, it can provide stable current and reduce power consumption, improving the efficiency and reliability of the power system.
2. **Motor Drive**:
Due to its high current capability and low heat loss, this MOSFET performs well in motor drive applications. It can be used in motor control units to provide efficient current switching and control, ensuring smooth operation of the motor.
3. **Industrial Control**:
In industrial control systems, the DMN3005LK3-13-VB can be used in a variety of high-power switching applications. Its high current handling capability and low on-resistance make it suitable for industrial applications such as motor drive, power protection, and load switching, ensuring stable performance in harsh environments.
4. **Automotive Electronics**:
This MOSFET is suitable for power management and switch control applications in automotive electronic systems. It can be used for power windows, power seats and other high-power automotive components to provide efficient and reliable switching control.
5. **Consumer Electronics**:
In consumer electronic devices, the DMN3005LK3-13-VB can be used for power management and load switching, such as laptops and high-power tablets. Its high efficiency and low power consumption can improve the overall performance and battery life of the device.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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