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DMN26D0UT-VB Product details

Product introduction:

DMN26D0UT-VB Product Introduction



The DMN26D0UT-VB is a unipolar N-channel MOSFET in SC75-3 package, designed for low voltage applications. It has a maximum drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of ±12V. The threshold voltage (Vth) of this MOSFET ranges from 0.5V to 1.5V, ensuring stable switching at low voltages. The DMN26D0UT-VB is manufactured using Trench technology and is suitable for small electronic devices that require low power consumption and high efficiency.



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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SC75-3 Single-N 20V 0.5~1.5V 0.85A 390mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SC75-3 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SC75-3 Single-N 20V 0.5~1.5V 0.85A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SC75-3 Single-N 20V 0.5~1.5V 0.85A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SC75-3 Single-N
Detailed parameter description



- **Package**: SC75-3

- **Configuration**: Unipolar N-channel

- **Maximum drain-source voltage (VDS)**: 20V

- **Maximum gate-source voltage (VGS)**: ±12V

- **Threshold voltage (Vth)**: 0.5~1.5V

- **On-resistance (RDS(ON))**:

- 390mΩ @ VGS = 2.5V

- 270mΩ @ VGS = 4.5V

- **Maximum drain current (ID)**: 0.85A

- **Technology**: Trench



Domain and module applications:

Applications and Module Examples



1. **Portable Electronics**:

The DMN26D0UT-VB’s small SC75-3 package and moderate on-resistance make it suitable for portable electronic devices such as smartphones and handheld calculators. In these applications, it can effectively manage power switching operations to ensure high efficiency and long battery life of the device.



2. **Low-Power Load Switch**:

In low-power load switching applications such as LED lighting and small relays, the DMN26D0UT-VB can provide reliable switching performance. Although its maximum drain current is 0.85A, its low on-resistance helps reduce power losses during switching and ensure high efficiency of the device.



3. **Power Management**:

In power management circuits, especially those that require high efficiency and low power consumption, this MOSFET can be used in DC-DC converters and battery-powered systems. It can provide stable switching performance during conversion and regulation, helping to improve overall system efficiency.



4. **Small Motor Drive**:

The DMN26D0UT-VB can also be used in small motor drive applications, such as small DC motors. In this case, although its current capability is relatively limited, its high efficiency and low power consumption make it excellent in applications that require fine control.



The DMN26D0UT-VB's small package, moderate on-resistance, and low power consumption make it outstanding in applications such as portable electronic devices, low-power load switches, power management, and small motor drives, providing efficient and reliable solutions for these fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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