中文
English
DMN2040LTS-VB Product details
Back to previous pageProduct introduction：
Product Introduction
**DMN2040LTS-VB** is a high-efficiency N-Channel MOSFET packaged in TSSOP8 and configured as a common-source N+N-Channel structure. The maximum drain-source voltage of this MOSFET is 20V, and it can operate stably at a gate-source voltage of ±12V. Its on-resistance (RDS(ON)) is 14mΩ at VGS = 4.5V and 18mΩ at VGS = 2.5V, with excellent low on-resistance characteristics. The threshold voltage (Vth) is in the range of 0.5V to 1.5V, which is suitable for efficient switching operation at low gate voltage. This MOSFET uses Trench technology and supports a maximum drain current of up to 7.6A, making it an ideal choice for high-efficiency and low-power applications.
**DMN2040LTS-VB** is a high-efficiency N-Channel MOSFET packaged in TSSOP8 and configured as a common-source N+N-Channel structure. The maximum drain-source voltage of this MOSFET is 20V, and it can operate stably at a gate-source voltage of ±12V. Its on-resistance (RDS(ON)) is 14mΩ at VGS = 4.5V and 18mΩ at VGS = 2.5V, with excellent low on-resistance characteristics. The threshold voltage (Vth) is in the range of 0.5V to 1.5V, which is suitable for efficient switching operation at low gate voltage. This MOSFET uses Trench technology and supports a maximum drain current of up to 7.6A, making it an ideal choice for high-efficiency and low-power applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
Detailed parameter description
- **Package**: TSSOP8
- **Configuration**: Common Source N+N-Channel
- **Drain-Source Voltage (VDS)**: 20V
- **Gate-Source Voltage (VGS)**: ±12V
- **Threshold Voltage (Vth)**: 0.5 ~ 1.5V
- **On-Resistance (RDS(ON))**:
- 18mΩ @ VGS = 2.5V
- 14mΩ @ VGS = 4.5V
- **Maximum Drain Current (ID)**: 7.6A
- **Technology**: Trench
- **Package**: TSSOP8
- **Configuration**: Common Source N+N-Channel
- **Drain-Source Voltage (VDS)**: 20V
- **Gate-Source Voltage (VGS)**: ±12V
- **Threshold Voltage (Vth)**: 0.5 ~ 1.5V
- **On-Resistance (RDS(ON))**:
- 18mΩ @ VGS = 2.5V
- 14mΩ @ VGS = 4.5V
- **Maximum Drain Current (ID)**: 7.6A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **Power Management**: The DMN2040LTS-VB excels in power management circuits, such as power switches and battery protection circuits. Its low on-resistance and high current handling capability enable it to effectively manage the switching operation of the power supply, ensuring low power consumption and high efficiency.
2. **DC-DC Converter**: This MOSFET is suitable for a variety of DC-DC converters, such as buck and boost converters. Its low on-resistance helps improve conversion efficiency, reduce energy loss, and ensure stable voltage output.
3. **Load Switch**: In load switching applications, such as motor drives and high power switches, the high current handling capability and low on-resistance of the DMN2040LTS-VB provide stable switching performance, ensuring efficient control and management of the load.
4. **Consumer Electronics**: DMN2040LTS-VB is also widely used in power management modules of consumer electronic devices such as mobile phones, tablets and notebook computers. Its high performance and small package are suitable for efficient power control and switching operations in a compact space.
1. **Power Management**: The DMN2040LTS-VB excels in power management circuits, such as power switches and battery protection circuits. Its low on-resistance and high current handling capability enable it to effectively manage the switching operation of the power supply, ensuring low power consumption and high efficiency.
2. **DC-DC Converter**: This MOSFET is suitable for a variety of DC-DC converters, such as buck and boost converters. Its low on-resistance helps improve conversion efficiency, reduce energy loss, and ensure stable voltage output.
3. **Load Switch**: In load switching applications, such as motor drives and high power switches, the high current handling capability and low on-resistance of the DMN2040LTS-VB provide stable switching performance, ensuring efficient control and management of the load.
4. **Consumer Electronics**: DMN2040LTS-VB is also widely used in power management modules of consumer electronic devices such as mobile phones, tablets and notebook computers. Its high performance and small package are suitable for efficient power control and switching operations in a compact space.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
