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DMG8880LK3-13-VB Product details
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Product Introduction
**DMG8880LK3-13-VB** is a unipolar N-channel MOSFET in TO252 package, designed for high current and low resistance applications. The maximum drain-to-source voltage (VDS) of this MOSFET is 30V, which is suitable for medium and low voltage switching and amplification applications. DMG8880LK3-13-VB uses Trench technology to provide ultra-low on-resistance and good switching performance. Its threshold voltage (Vth) is 1.7V, ensuring efficient switching performance under low voltage drive. When VGS=10V, the on-resistance (RDS(ON)) of this MOSFET is 5mΩ, showing extremely low power loss; when VGS=4.5V, the RDS(ON) is 6mΩ, which is suitable for applications requiring low power consumption and high current. Its maximum drain current (ID) is 80A, which can support high current loads.
**DMG8880LK3-13-VB** is a unipolar N-channel MOSFET in TO252 package, designed for high current and low resistance applications. The maximum drain-to-source voltage (VDS) of this MOSFET is 30V, which is suitable for medium and low voltage switching and amplification applications. DMG8880LK3-13-VB uses Trench technology to provide ultra-low on-resistance and good switching performance. Its threshold voltage (Vth) is 1.7V, ensuring efficient switching performance under low voltage drive. When VGS=10V, the on-resistance (RDS(ON)) of this MOSFET is 5mΩ, showing extremely low power loss; when VGS=4.5V, the RDS(ON) is 6mΩ, which is suitable for applications requiring low power consumption and high current. Its maximum drain current (ID) is 80A, which can support high current loads.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: DMG8880LK3-13-VB
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Maximum drain to source voltage (VDS)**: 30V
- **Maximum gate to source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ (VGS=4.5V)
- 5mΩ (VGS=10V)
- **Maximum drain current (ID)**: 80A
- **Technology**: Trench
- **Model**: DMG8880LK3-13-VB
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Maximum drain to source voltage (VDS)**: 30V
- **Maximum gate to source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ (VGS=4.5V)
- 5mΩ (VGS=10V)
- **Maximum drain current (ID)**: 80A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
The high current carrying capacity and ultra-low on-resistance of **DMG8880LK3-13-VB** enable it to excel in applications in multiple fields, including:
1. **Power management**:
- In power management systems, DMG8880LK3-13-VB can be used as a high-efficiency switching element to control the switching and regulation of power. Its low on-resistance reduces power loss and improves the overall efficiency of the system, making it particularly suitable for high-power power supply designs.
2. **DC-DC converter**:
- In DC-DC converter applications, this MOSFET is able to provide low-loss, high-efficiency current switching. Its low RDS(ON) and high current capability enable it to excel in conversion efficiency and stability, making it suitable for high-efficiency voltage converter designs.
3. **Motor Drive**:
- In motor control circuits, the DMG8880LK3-13-VB is suitable as a high current switching element to control the start, stop and speed regulation of the motor. Its high current carrying capacity and low power consumption make it suitable for driving high power motor systems.
4. **LED Driver**:
- In LED drive applications, the DMG8880LK3-13-VB can be used to control the switching and dimming of LEDs. Its low on-resistance helps improve the efficiency of the LED driver, and is particularly suitable for high power or high brightness LED lighting systems.
5. **Load Switch**:
- This MOSFET is also suitable for load switch applications, which can effectively control current distribution. Its high current capability and low on-resistance make it excellent in various high power load switch circuits, suitable for current regulation and load management.
These applications demonstrate the wide applicability of the DMG8880LK3-13-VB in various circuit designs requiring high current and high efficiency, especially in high power applications such as power management, motor drive and LED drive.
The high current carrying capacity and ultra-low on-resistance of **DMG8880LK3-13-VB** enable it to excel in applications in multiple fields, including:
1. **Power management**:
- In power management systems, DMG8880LK3-13-VB can be used as a high-efficiency switching element to control the switching and regulation of power. Its low on-resistance reduces power loss and improves the overall efficiency of the system, making it particularly suitable for high-power power supply designs.
2. **DC-DC converter**:
- In DC-DC converter applications, this MOSFET is able to provide low-loss, high-efficiency current switching. Its low RDS(ON) and high current capability enable it to excel in conversion efficiency and stability, making it suitable for high-efficiency voltage converter designs.
3. **Motor Drive**:
- In motor control circuits, the DMG8880LK3-13-VB is suitable as a high current switching element to control the start, stop and speed regulation of the motor. Its high current carrying capacity and low power consumption make it suitable for driving high power motor systems.
4. **LED Driver**:
- In LED drive applications, the DMG8880LK3-13-VB can be used to control the switching and dimming of LEDs. Its low on-resistance helps improve the efficiency of the LED driver, and is particularly suitable for high power or high brightness LED lighting systems.
5. **Load Switch**:
- This MOSFET is also suitable for load switch applications, which can effectively control current distribution. Its high current capability and low on-resistance make it excellent in various high power load switch circuits, suitable for current regulation and load management.
These applications demonstrate the wide applicability of the DMG8880LK3-13-VB in various circuit designs requiring high current and high efficiency, especially in high power applications such as power management, motor drive and LED drive.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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