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DMG6968UTS-13-VB Product details
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Product Introduction
**DMG6968UTS-13-VB** is a dual N-channel MOSFET in TSSOP8 package and configured as a common drain structure. This MOSFET uses Trench technology and has a drain-source voltage of 20V, suitable for low-power switching and power management applications. Its low gate threshold voltage and on-resistance enable it to achieve high-efficiency switching operation at low voltage, suitable for application scenarios requiring high efficiency and high-density packaging.
**DMG6968UTS-13-VB** is a dual N-channel MOSFET in TSSOP8 package and configured as a common drain structure. This MOSFET uses Trench technology and has a drain-source voltage of 20V, suitable for low-power switching and power management applications. Its low gate threshold voltage and on-resistance enable it to achieve high-efficiency switching operation at low voltage, suitable for application scenarios requiring high efficiency and high-density packaging.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
Detailed parameter description
- **Model**: DMG6968UTS-13-VB
- **Package**: TSSOP8
- **Configuration**: Common source N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 0.5V to 1.5V
- **On-resistance (RDS(ON))**:
- 32mΩ @ VGS = 2.5V
- 22mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 6.6A
- **Technology**: Trench technology
- **Model**: DMG6968UTS-13-VB
- **Package**: TSSOP8
- **Configuration**: Common source N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 0.5V to 1.5V
- **On-resistance (RDS(ON))**:
- 32mΩ @ VGS = 2.5V
- 22mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 6.6A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
**1. Power management and regulation**: The DMG6968UTS-13-VB is ideal for use in power management and regulation circuits such as DC-DC converters and load switches. Its low on-resistance and common-source configuration can improve power conversion efficiency and reduce power consumption, especially in compact board designs.
**2. Low-power switching applications**: This MOSFET excels in low-power switching applications such as power switches for portable electronic devices or small motor drive switches. Its low gate threshold voltage and low on-resistance enable it to effectively control low current loads while maintaining high efficiency performance.
**3. Portable and consumer electronics**: In portable and consumer electronics, the DMG6968UTS-13-VB is suitable for a variety of power management and switching applications such as smartphones, tablets, and portable audio systems due to its compact TSSOP8 package and high efficiency.
**4. LED drive circuit**: This MOSFET is also suitable for LED drive circuits, which can stably control the switching of LEDs and provide efficient current control and management. Its low on-resistance and high current capability enable it to reduce power consumption and improve system efficiency in LED lighting systems.
These application examples show the wide application of DMG6968UTS-13-VB MOSFET in various low-power and high-efficiency circuits, highlighting its advantages in improving system performance and efficiency.
**1. Power management and regulation**: The DMG6968UTS-13-VB is ideal for use in power management and regulation circuits such as DC-DC converters and load switches. Its low on-resistance and common-source configuration can improve power conversion efficiency and reduce power consumption, especially in compact board designs.
**2. Low-power switching applications**: This MOSFET excels in low-power switching applications such as power switches for portable electronic devices or small motor drive switches. Its low gate threshold voltage and low on-resistance enable it to effectively control low current loads while maintaining high efficiency performance.
**3. Portable and consumer electronics**: In portable and consumer electronics, the DMG6968UTS-13-VB is suitable for a variety of power management and switching applications such as smartphones, tablets, and portable audio systems due to its compact TSSOP8 package and high efficiency.
**4. LED drive circuit**: This MOSFET is also suitable for LED drive circuits, which can stably control the switching of LEDs and provide efficient current control and management. Its low on-resistance and high current capability enable it to reduce power consumption and improve system efficiency in LED lighting systems.
These application examples show the wide application of DMG6968UTS-13-VB MOSFET in various low-power and high-efficiency circuits, highlighting its advantages in improving system performance and efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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