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DMG6602S-VB Product details
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Product Introduction
**DMG6602S-VB** is a dual N-type and P-type MOSFET in SOT23-6 package, using Trench technology. This MOSFET is designed for low-voltage, high-efficiency switching applications, with a maximum drain-source voltage (V_DS) of ±20V and a maximum continuous drain current (I_D) of ±5.5A. Its threshold voltage (V_th) is 1.0V (N-type) and -1.2V (P-type), ensuring reliable switching at lower gate-source voltages. The low on-resistance (R_DS(on)) is 30/79mΩ and 22/55mΩ at V_GS of 4.5V and 10V, respectively, providing high efficiency and good power management, and is particularly suitable for a variety of high-efficiency switching applications.
**DMG6602S-VB** is a dual N-type and P-type MOSFET in SOT23-6 package, using Trench technology. This MOSFET is designed for low-voltage, high-efficiency switching applications, with a maximum drain-source voltage (V_DS) of ±20V and a maximum continuous drain current (I_D) of ±5.5A. Its threshold voltage (V_th) is 1.0V (N-type) and -1.2V (P-type), ensuring reliable switching at lower gate-source voltages. The low on-resistance (R_DS(on)) is 30/79mΩ and 22/55mΩ at V_GS of 4.5V and 10V, respectively, providing high efficiency and good power management, and is particularly suitable for a variety of high-efficiency switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | 22/55mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P |
Detailed parameter description
- **Model**: DMG6602S-VB
- **Package**: SOT23-6
- **Configuration**: Dual N-type + P-type MOSFET
- **Maximum drain-source voltage (V_DS)**: ±20V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**:
- N-type: 1.0V
- P-type: -1.2V
- **On-resistance (R_DS(on))**:
- N-type:
- 30mΩ @ V_GS = 4.5V
- 22mΩ @ V_GS = 10V
- P-type:
- 79mΩ @ V_GS = 4.5V
- 55mΩ @ V_GS = 10V
- **Maximum continuous drain current (I_D)**:
- N-type: 5.5A
- P-type: 3.4A
- **Technology**: Trench
- **Model**: DMG6602S-VB
- **Package**: SOT23-6
- **Configuration**: Dual N-type + P-type MOSFET
- **Maximum drain-source voltage (V_DS)**: ±20V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**:
- N-type: 1.0V
- P-type: -1.2V
- **On-resistance (R_DS(on))**:
- N-type:
- 30mΩ @ V_GS = 4.5V
- 22mΩ @ V_GS = 10V
- P-type:
- 79mΩ @ V_GS = 4.5V
- 55mΩ @ V_GS = 10V
- **Maximum continuous drain current (I_D)**:
- N-type: 5.5A
- P-type: 3.4A
- **Technology**: Trench
Domain and module applications：
Applications and Modules
1. **Portable Electronic Devices**:
The low voltage operation characteristics and high switching efficiency of the DMG6602S-VB make it ideal for use in portable electronic devices such as smartphones, tablets, and other small electronic products. It enables efficient power management and load switching, improving the performance and battery life of the device.
2. **DC-DC Converters**:
In DC-DC converters, the low on-resistance and dual MOSFET structure of this MOSFET allow for efficient voltage conversion. It is suitable for high-frequency switching power supplies such as buck converters and boost converters to provide stable power output and efficient power management.
3. **Load Switches**:
The DMG6602S-VB can be used in a variety of load switching applications, especially where low voltage loads need to be controlled. Its dual N-type and P-type MOSFET configuration allows for bidirectional switch control in the same package, suitable for power protection and load switching.
4. **Industrial Control**:
In industrial control systems, this MOSFET can be used in motor drives, switching power supplies, and other control circuits. Its high current capability and low power consumption enable it to provide reliable performance in demanding industrial environments.
5. **Automotive Electronics**:
The efficient switching capability and durability of the DMG6602S-VB make it suitable for use in automotive electronics. It can be used in automotive power management systems, motor control, and other modules that require efficient switching control to ensure stable operation in automotive environments.
1. **Portable Electronic Devices**:
The low voltage operation characteristics and high switching efficiency of the DMG6602S-VB make it ideal for use in portable electronic devices such as smartphones, tablets, and other small electronic products. It enables efficient power management and load switching, improving the performance and battery life of the device.
2. **DC-DC Converters**:
In DC-DC converters, the low on-resistance and dual MOSFET structure of this MOSFET allow for efficient voltage conversion. It is suitable for high-frequency switching power supplies such as buck converters and boost converters to provide stable power output and efficient power management.
3. **Load Switches**:
The DMG6602S-VB can be used in a variety of load switching applications, especially where low voltage loads need to be controlled. Its dual N-type and P-type MOSFET configuration allows for bidirectional switch control in the same package, suitable for power protection and load switching.
4. **Industrial Control**:
In industrial control systems, this MOSFET can be used in motor drives, switching power supplies, and other control circuits. Its high current capability and low power consumption enable it to provide reliable performance in demanding industrial environments.
5. **Automotive Electronics**:
The efficient switching capability and durability of the DMG6602S-VB make it suitable for use in automotive electronics. It can be used in automotive power management systems, motor control, and other modules that require efficient switching control to ensure stable operation in automotive environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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