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DMG4800LK3-13-VB Product details
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Product Introduction
**DMG4800LK3-13-VB** is a high-performance N-Channel MOSFET in a TO252 package for applications requiring high current and low on-resistance. It can withstand drain-source voltages up to 30V and provide a maximum drain current of up to 70A. The on-resistance (RDS(ON)) of this MOSFET is 7mΩ at VGS = 10V and 9mΩ at VGS = 4.5V. It has a threshold voltage (Vth) of 1.7V, ensuring that it can operate effectively at lower gate voltages. Using Trench technology, this MOSFET is designed for efficient power management and switching applications.
**DMG4800LK3-13-VB** is a high-performance N-Channel MOSFET in a TO252 package for applications requiring high current and low on-resistance. It can withstand drain-source voltages up to 30V and provide a maximum drain current of up to 70A. The on-resistance (RDS(ON)) of this MOSFET is 7mΩ at VGS = 10V and 9mΩ at VGS = 4.5V. It has a threshold voltage (Vth) of 1.7V, ensuring that it can operate effectively at lower gate voltages. Using Trench technology, this MOSFET is designed for efficient power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 70A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 70A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **High Power Switching Circuits**: The DMG4800LK3-13-VB performs well in high power switching circuits such as power switches and motor drive circuits. Its low on-resistance and high leakage current capability allow it to handle large current loads, making it suitable for applications that require high power density and efficient switching.
2. **DC-DC Converter**: In DC-DC converter applications, the DMG4800LK3-13-VB is able to perform power conversion tasks efficiently, and its low on-resistance helps reduce power losses and improve conversion efficiency. It can be applied to buck and boost converters to improve the overall performance of the power supply.
3. **Power Management System**: This MOSFET is suitable for various power management systems such as switching, load distribution, and protection circuits for power rails. Its high current handling capability and low power consumption characteristics enable it to effectively manage power and improve the stability and efficiency of the system.
4. **Automotive electronics**: In automotive electronics applications, such as battery management systems and on-board chargers, the DMG4800LK3-13-VB can provide reliable switching performance. Its high current carrying capacity and good thermal performance enable it to work stably in automotive environments, ensuring system reliability and performance.
1. **High Power Switching Circuits**: The DMG4800LK3-13-VB performs well in high power switching circuits such as power switches and motor drive circuits. Its low on-resistance and high leakage current capability allow it to handle large current loads, making it suitable for applications that require high power density and efficient switching.
2. **DC-DC Converter**: In DC-DC converter applications, the DMG4800LK3-13-VB is able to perform power conversion tasks efficiently, and its low on-resistance helps reduce power losses and improve conversion efficiency. It can be applied to buck and boost converters to improve the overall performance of the power supply.
3. **Power Management System**: This MOSFET is suitable for various power management systems such as switching, load distribution, and protection circuits for power rails. Its high current handling capability and low power consumption characteristics enable it to effectively manage power and improve the stability and efficiency of the system.
4. **Automotive electronics**: In automotive electronics applications, such as battery management systems and on-board chargers, the DMG4800LK3-13-VB can provide reliable switching performance. Its high current carrying capacity and good thermal performance enable it to work stably in automotive environments, ensuring system reliability and performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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