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DMG4468LK3-13-VB Product details
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Product Introduction
**DMG4468LK3-13-VB** is a single N-type MOSFET in TO252 package, using advanced Trench technology. It is designed for low voltage, high current applications, with a maximum drain-source voltage (V_DS) of 30V and a continuous leakage current capability (I_D) of up to 70A. Its threshold voltage (V_th) is 1.7V, ensuring reliable switching operation even at low gate-source voltages. The on-resistance (R_DS(on)) is 9mΩ and 7mΩ at V_GS of 4.5V and 10V, respectively, making it an excellent performer in high-efficiency applications, especially for applications requiring fast switching and high power handling.
**DMG4468LK3-13-VB** is a single N-type MOSFET in TO252 package, using advanced Trench technology. It is designed for low voltage, high current applications, with a maximum drain-source voltage (V_DS) of 30V and a continuous leakage current capability (I_D) of up to 70A. Its threshold voltage (V_th) is 1.7V, ensuring reliable switching operation even at low gate-source voltages. The on-resistance (R_DS(on)) is 9mΩ and 7mΩ at V_GS of 4.5V and 10V, respectively, making it an excellent performer in high-efficiency applications, especially for applications requiring fast switching and high power handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: DMG4468LK3-13-VB
- **Package**: TO252
- **Configuration**: Single N-type MOSFET
- **Maximum drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(on))**:
- 9mΩ @ V_GS = 4.5V
- 7mΩ @ V_GS = 10V
- **Maximum continuous leakage current (I_D)**: 70A
- **Technology**: Trench
- **Model**: DMG4468LK3-13-VB
- **Package**: TO252
- **Configuration**: Single N-type MOSFET
- **Maximum drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(on))**:
- 9mΩ @ V_GS = 4.5V
- 7mΩ @ V_GS = 10V
- **Maximum continuous leakage current (I_D)**: 70A
- **Technology**: Trench
Domain and module applications：
Applications and modules
1. **Power tools**:
The high current handling capability and low on-resistance of the DMG4468LK3-13-VB make it an excellent performer in power tools. It can effectively control the start and operation of the motor, providing a stable high power output, and is suitable for applications that require efficient current management.
2. **DC-DC converter**:
In DC-DC converters, the low on-resistance and high current capability of this MOSFET can significantly improve the conversion efficiency. It is suitable for high-efficiency power modules such as synchronous buck converters, ensuring efficient voltage conversion in a compact design.
3. **Automotive electronics**:
The DMG4468LK3-13-VB is suitable for power management modules and motor control units in automotive electronics. Its high current capability and reliable switching performance enable it to cope with the harsh conditions in the automotive environment, and is suitable for applications such as electric pumps and fan drives.
4. **Load Switch**:
This MOSFET is also ideal in load switch applications, especially in scenarios where low power consumption and high efficiency are required. Its low R_DS(on) and high current capability enable it to provide efficient switching control while reducing heat loss.
5. **Consumer Electronics**:
In consumer electronics, the DMG4468LK3-13-VB can be used in a variety of high-efficiency power management and control circuits such as laptops, tablets, and smart home devices. Its high efficiency enables it to meet the high power and low loss requirements of modern electronics.
1. **Power tools**:
The high current handling capability and low on-resistance of the DMG4468LK3-13-VB make it an excellent performer in power tools. It can effectively control the start and operation of the motor, providing a stable high power output, and is suitable for applications that require efficient current management.
2. **DC-DC converter**:
In DC-DC converters, the low on-resistance and high current capability of this MOSFET can significantly improve the conversion efficiency. It is suitable for high-efficiency power modules such as synchronous buck converters, ensuring efficient voltage conversion in a compact design.
3. **Automotive electronics**:
The DMG4468LK3-13-VB is suitable for power management modules and motor control units in automotive electronics. Its high current capability and reliable switching performance enable it to cope with the harsh conditions in the automotive environment, and is suitable for applications such as electric pumps and fan drives.
4. **Load Switch**:
This MOSFET is also ideal in load switch applications, especially in scenarios where low power consumption and high efficiency are required. Its low R_DS(on) and high current capability enable it to provide efficient switching control while reducing heat loss.
5. **Consumer Electronics**:
In consumer electronics, the DMG4468LK3-13-VB can be used in a variety of high-efficiency power management and control circuits such as laptops, tablets, and smart home devices. Its high efficiency enables it to meet the high power and low loss requirements of modern electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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