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DFF7N60-VB Product details
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Product Introduction
**DFF7N60-VB** is a high voltage N-Channel MOSFET in TO220F package, suitable for electronic applications requiring high voltage resistance. It can withstand drain-source voltage up to 650V and provide a maximum drain current of up to 10A. The on-resistance (RDS(ON)) of this MOSFET is 830mΩ at VGS = 10V, and it uses Plannar technology, which is suitable for high voltage and high power switching applications. Its threshold voltage (Vth) is 3.5V, ensuring that it works reliably at the appropriate gate voltage.
**DFF7N60-VB** is a high voltage N-Channel MOSFET in TO220F package, suitable for electronic applications requiring high voltage resistance. It can withstand drain-source voltage up to 650V and provide a maximum drain current of up to 10A. The on-resistance (RDS(ON)) of this MOSFET is 830mΩ at VGS = 10V, and it uses Plannar technology, which is suitable for high voltage and high power switching applications. Its threshold voltage (Vth) is 3.5V, ensuring that it works reliably at the appropriate gate voltage.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package**: TO220F
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 830mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 10A
- **Technology**: Plannar
- **Package**: TO220F
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 830mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 10A
- **Technology**: Plannar
Domain and module applications：
Applications and module examples
1. **High-voltage power conversion**: The DFF7N60-VB is suitable for high-voltage power conversion applications such as high-voltage switching power supplies and power adapters. Its high voltage withstand capability (650V) and moderate on-resistance enable it to operate stably in high-voltage environments, reduce switching losses and improve the overall efficiency of the power supply.
2. **Power inverter**: In inverter applications, the high voltage and high current specifications of the DFF7N60-VB enable it to effectively handle high-power DC to AC conversion. It can be used in solar inverters, electric vehicle inverters, and other high-power inverter systems to provide stable and reliable switching performance.
3. **Motor drive**: In motor drive systems, the DFF7N60-VB can be used as a high-voltage and high-current switching element, such as for start-stop control or speed regulation systems for motors. Its high current capability (10A) and high-voltage withstand characteristics make it suitable for drive applications that require high reliability and high performance.
4. **High-power switching circuit**: This MOSFET is also suitable for various high-power switching circuits, such as power amplifiers and high-power switching modules. Its high leakage current capability and high-voltage resistance make it perform well when handling high-power loads, ensuring efficient operation and reliability of the circuit.
1. **High-voltage power conversion**: The DFF7N60-VB is suitable for high-voltage power conversion applications such as high-voltage switching power supplies and power adapters. Its high voltage withstand capability (650V) and moderate on-resistance enable it to operate stably in high-voltage environments, reduce switching losses and improve the overall efficiency of the power supply.
2. **Power inverter**: In inverter applications, the high voltage and high current specifications of the DFF7N60-VB enable it to effectively handle high-power DC to AC conversion. It can be used in solar inverters, electric vehicle inverters, and other high-power inverter systems to provide stable and reliable switching performance.
3. **Motor drive**: In motor drive systems, the DFF7N60-VB can be used as a high-voltage and high-current switching element, such as for start-stop control or speed regulation systems for motors. Its high current capability (10A) and high-voltage withstand characteristics make it suitable for drive applications that require high reliability and high performance.
4. **High-power switching circuit**: This MOSFET is also suitable for various high-power switching circuits, such as power amplifiers and high-power switching modules. Its high leakage current capability and high-voltage resistance make it perform well when handling high-power loads, ensuring efficient operation and reliability of the circuit.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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