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D9NM50N-VB Product details
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Product Introduction
**D9NM50N-VB** is a high voltage single N-channel MOSFET with TO252 package type and SJ_Multi-EPI technology. This MOSFET is designed to operate under high voltage conditions of 650V and is suitable for applications requiring high withstand voltage and medium current. It has a high drain-source voltage and moderate on-resistance, which makes it excellent in high voltage switches and power management systems, and can effectively cope with complex voltage environments.
**D9NM50N-VB** is a high voltage single N-channel MOSFET with TO252 package type and SJ_Multi-EPI technology. This MOSFET is designed to operate under high voltage conditions of 650V and is suitable for applications requiring high withstand voltage and medium current. It has a high drain-source voltage and moderate on-resistance, which makes it excellent in high voltage switches and power management systems, and can effectively cope with complex voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: D9NM50N-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 9A
- **Technology**: SJ_Multi-EPI technology
- **Model**: D9NM50N-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 9A
- **Technology**: SJ_Multi-EPI technology
Domain and module applications：
Application fields and module examples
**1. High-voltage power management**: D9NM50N-VB is suitable for high-voltage power management systems such as industrial power supplies and switching power supplies. Its high withstand voltage characteristics enable it to handle voltages up to 650V, making it suitable for use as a key switching element in power conversion and power protection.
**2. Inverters and power converters**: In inverters and power converters, D9NM50N-VB can be used as a high-voltage switching device to convert DC to AC or between different voltages. Its high withstand voltage capability and moderate on-resistance enable it to operate stably in these applications.
**3. Lighting control systems**: In high-voltage lighting control systems, this MOSFET can be used to control the switching of high-voltage lamps, such as street lighting and industrial lighting. Its high withstand voltage and low on-resistance enable it to work reliably in high-voltage environments.
**4. Motor drive systems**: The D9NM50N-VB is also suitable for motor drive systems, especially in applications that require high voltage drive. Its high drain-source voltage and reliability enable it to cope with high voltage conditions in motor starting and operation.
These application areas demonstrate the wide applicability of the D9NM50N-VB MOSFET in high voltage environments and highlight its key role in various industrial and power systems.
**1. High-voltage power management**: D9NM50N-VB is suitable for high-voltage power management systems such as industrial power supplies and switching power supplies. Its high withstand voltage characteristics enable it to handle voltages up to 650V, making it suitable for use as a key switching element in power conversion and power protection.
**2. Inverters and power converters**: In inverters and power converters, D9NM50N-VB can be used as a high-voltage switching device to convert DC to AC or between different voltages. Its high withstand voltage capability and moderate on-resistance enable it to operate stably in these applications.
**3. Lighting control systems**: In high-voltage lighting control systems, this MOSFET can be used to control the switching of high-voltage lamps, such as street lighting and industrial lighting. Its high withstand voltage and low on-resistance enable it to work reliably in high-voltage environments.
**4. Motor drive systems**: The D9NM50N-VB is also suitable for motor drive systems, especially in applications that require high voltage drive. Its high drain-source voltage and reliability enable it to cope with high voltage conditions in motor starting and operation.
These application areas demonstrate the wide applicability of the D9NM50N-VB MOSFET in high voltage environments and highlight its key role in various industrial and power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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