中文
English
D9N52-VB Product details
Back to previous pageProduct introduction：
Product Introduction
**D9N52-VB** is a high voltage N-Channel MOSFET in TO252 package, suitable for applications requiring high voltage withstand capability and medium current. It has a drain-source voltage (VDS) of 650V and a continuous drain current (ID) of 7A, suitable for operation in high voltage environments. The MOSFET uses SJ_Multi-EPI technology, which enables it to show good stability and reliability under high voltage operation. Its higher threshold voltage (Vth) of 3.5V makes it suitable for medium and high voltage switching applications.
**D9N52-VB** is a high voltage N-Channel MOSFET in TO252 package, suitable for applications requiring high voltage withstand capability and medium current. It has a drain-source voltage (VDS) of 650V and a continuous drain current (ID) of 7A, suitable for operation in high voltage environments. The MOSFET uses SJ_Multi-EPI technology, which enables it to show good stability and reliability under high voltage operation. Its higher threshold voltage (Vth) of 3.5V makes it suitable for medium and high voltage switching applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Unipolar N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 700mΩ (at VGS=10V)
- **Continuous leakage current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
- **Package**: TO252
- **Configuration**: Unipolar N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 700mΩ (at VGS=10V)
- **Continuous leakage current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applicable fields and modules
The high drain-source voltage and moderate on-resistance of the **D9N52-VB** MOSFET make it very suitable for the following fields and modules:
1. **Power converter**:
- Used as a switching device in high-voltage DC-DC converters, capable of handling voltages up to 650V, suitable for industrial power supplies and power electronic equipment.
- Used as the output switch of high-voltage power supplies to ensure stable power supply and efficient energy conversion.
2. **Home appliances and industrial equipment**:
- Used as a high-voltage switch in home appliances and industrial equipment, such as inverters and high-voltage motor drive systems, capable of withstanding high-voltage operating environments.
- Provides reliable switching functions in power management systems to improve the performance and reliability of equipment.
3. **Electric vehicles and battery management systems**:
- Used as a high-voltage switch in electric vehicle battery management systems, capable of controlling the switching of high-voltage battery packs to ensure system safety and stability.
- High voltage switch used in battery chargers, capable of withstanding high voltages and ensuring efficiency and safety during charging.
4. **High voltage inverter**:
- As a switching element in a high voltage inverter, it provides reliable switching functions to ensure that the inverter can efficiently convert DC to AC.
- Used in solar inverters and wind inverters to handle high voltage inputs from renewable energy sources and improve the overall efficiency and performance of the system.
By applying **D9N52-VB** MOSFET, efficient power management can be achieved in a high voltage environment, improving the reliability and stability of the equipment, and is suitable for a variety of applications with high voltage and high efficiency requirements.
The high drain-source voltage and moderate on-resistance of the **D9N52-VB** MOSFET make it very suitable for the following fields and modules:
1. **Power converter**:
- Used as a switching device in high-voltage DC-DC converters, capable of handling voltages up to 650V, suitable for industrial power supplies and power electronic equipment.
- Used as the output switch of high-voltage power supplies to ensure stable power supply and efficient energy conversion.
2. **Home appliances and industrial equipment**:
- Used as a high-voltage switch in home appliances and industrial equipment, such as inverters and high-voltage motor drive systems, capable of withstanding high-voltage operating environments.
- Provides reliable switching functions in power management systems to improve the performance and reliability of equipment.
3. **Electric vehicles and battery management systems**:
- Used as a high-voltage switch in electric vehicle battery management systems, capable of controlling the switching of high-voltage battery packs to ensure system safety and stability.
- High voltage switch used in battery chargers, capable of withstanding high voltages and ensuring efficiency and safety during charging.
4. **High voltage inverter**:
- As a switching element in a high voltage inverter, it provides reliable switching functions to ensure that the inverter can efficiently convert DC to AC.
- Used in solar inverters and wind inverters to handle high voltage inputs from renewable energy sources and improve the overall efficiency and performance of the system.
By applying **D9N52-VB** MOSFET, efficient power management can be achieved in a high voltage environment, improving the reliability and stability of the equipment, and is suitable for a variety of applications with high voltage and high efficiency requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
