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D9N50-VB Product details
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Product Introduction
**D9N50-VB** is an N-type MOSFET in TO252 package, using SJ_Multi-EPI technology. It has a drain-source voltage (V_DS) of up to 650V and a maximum continuous drain current (I_D) of 7A, making it very suitable for high-voltage applications and high-power handling needs. With a threshold voltage (V_th) of 3.5V and a low on-resistance (R_DS(on)) of 700mΩ (at V_GS = 10V), this MOSFET provides a stable and efficient solution for a variety of switching and power conversion applications.
**D9N50-VB** is an N-type MOSFET in TO252 package, using SJ_Multi-EPI technology. It has a drain-source voltage (V_DS) of up to 650V and a maximum continuous drain current (I_D) of 7A, making it very suitable for high-voltage applications and high-power handling needs. With a threshold voltage (V_th) of 3.5V and a low on-resistance (R_DS(on)) of 700mΩ (at V_GS = 10V), this MOSFET provides a stable and efficient solution for a variety of switching and power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: D9N50-VB
- **Package**: TO252
- **Configuration**: Single N-type MOSFET
- **Maximum drain-source voltage (V_DS)**: 650V
- **Gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(on))**: 700mΩ @ V_GS = 10V
- **Maximum continuous leakage current (I_D)**: 7A
- **Technology**: SJ_Multi-EPI
- **Model**: D9N50-VB
- **Package**: TO252
- **Configuration**: Single N-type MOSFET
- **Maximum drain-source voltage (V_DS)**: 650V
- **Gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(on))**: 700mΩ @ V_GS = 10V
- **Maximum continuous leakage current (I_D)**: 7A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and Modules
1. **High Voltage Power Management**:
The high drain-source voltage capability of the D9N50-VB makes it ideal for use in high voltage power management systems. In power converters and power regulators, it can be used as a switching element to provide efficient power conversion, especially in applications where high voltages need to be handled, such as industrial power supplies and AC power converters.
2. **Inverter**:
In inverter applications, the high withstand voltage characteristics of the D9N50-VB enable it to handle high voltage signals from a DC power source and convert them to AC signals. Its high current handling capability ensures stable operation in high power inverters, especially in solar inverters and uninterruptible power supply (UPS) systems.
3. **Power Amplifier**:
In power amplifier modules, the D9N50-VB can be used as a switching component to handle high voltage and high power signals. Its low R_DS(on) ensures efficient power conversion and thermal management for high frequency and high power amplification applications.
4. **Motor Drive**:
In motor drive applications, this MOSFET can handle high voltage and current loads, and is suitable for use as a switching element in motor control circuits. It can provide stable switching operation to ensure high efficiency during motor startup and operation.
5. **Industrial Control**:
D9N50-VB is also widely used in industrial control systems, such as in high-voltage control modules and automation equipment. Its high voltage tolerance and high current handling capabilities make it a reliable choice in a variety of industrial applications.
1. **High Voltage Power Management**:
The high drain-source voltage capability of the D9N50-VB makes it ideal for use in high voltage power management systems. In power converters and power regulators, it can be used as a switching element to provide efficient power conversion, especially in applications where high voltages need to be handled, such as industrial power supplies and AC power converters.
2. **Inverter**:
In inverter applications, the high withstand voltage characteristics of the D9N50-VB enable it to handle high voltage signals from a DC power source and convert them to AC signals. Its high current handling capability ensures stable operation in high power inverters, especially in solar inverters and uninterruptible power supply (UPS) systems.
3. **Power Amplifier**:
In power amplifier modules, the D9N50-VB can be used as a switching component to handle high voltage and high power signals. Its low R_DS(on) ensures efficient power conversion and thermal management for high frequency and high power amplification applications.
4. **Motor Drive**:
In motor drive applications, this MOSFET can handle high voltage and current loads, and is suitable for use as a switching element in motor control circuits. It can provide stable switching operation to ensure high efficiency during motor startup and operation.
5. **Industrial Control**:
D9N50-VB is also widely used in industrial control systems, such as in high-voltage control modules and automation equipment. Its high voltage tolerance and high current handling capabilities make it a reliable choice in a variety of industrial applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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