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D9N10-VB Product details
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Product Introduction
**D9N10-VB** is a high-performance N-channel MOSFET in TO252 package. It uses advanced Trench technology, with high voltage resistance and reliable switching characteristics. This MOSFET provides stable current handling capability and moderate on-resistance at a drain-source voltage of 100V, suitable for various power management and switching applications.
**D9N10-VB** is a high-performance N-channel MOSFET in TO252 package. It uses advanced Trench technology, with high voltage resistance and reliable switching characteristics. This MOSFET provides stable current handling capability and moderate on-resistance at a drain-source voltage of 100V, suitable for various power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: D9N10-VB
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (V_DS)**: 100V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.8V
- **On-resistance (R_DS(on))**: 114mΩ @ V_GS = 10V
- **Maximum leakage current (I_D)**: 15A
- **Technology**: Trench
- **Model**: D9N10-VB
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (V_DS)**: 100V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.8V
- **On-resistance (R_DS(on))**: 114mΩ @ V_GS = 10V
- **Maximum leakage current (I_D)**: 15A
- **Technology**: Trench
Domain and module applications：
Applications and modules
1. **Power management system**: The high withstand voltage and moderate on-resistance of D9N10-VB make it suitable for use in power management modules, especially in applications where medium voltage and current need to be handled. For example, it can be used in DC-DC converters, regulators, and power switches, where power flow can be handled stably and efficiently.
2. **Switching circuit**: This MOSFET is suitable for a variety of switching circuits, including motor control, battery protection, and load switching. Its high withstand voltage and reasonable on-resistance enable it to operate reliably under high voltage and current conditions, making it suitable for application scenarios that require high withstand voltage switches.
3. **LED drive**: In LED drive circuits, the high withstand voltage and low on-resistance characteristics of D9N10-VB can help reduce the power loss of the drive circuit and improve the overall light efficiency and stability. It is suitable for LED drive applications that require high voltage and medium current, ensuring efficient current control and system stability.
4. **Inverter**: In inverter design, D9N10-VB can handle high voltage and medium current loads, and is suitable for high voltage inverter design. Its stable switching characteristics and good on-resistance help improve the efficiency and reliability of the inverter, and is suitable for various power conversion and inversion applications.
Through the examples of the above application fields, it can be seen that D9N10-VB performs well in high voltage, high withstand voltage and power conversion applications, and is an ideal choice in these fields.
1. **Power management system**: The high withstand voltage and moderate on-resistance of D9N10-VB make it suitable for use in power management modules, especially in applications where medium voltage and current need to be handled. For example, it can be used in DC-DC converters, regulators, and power switches, where power flow can be handled stably and efficiently.
2. **Switching circuit**: This MOSFET is suitable for a variety of switching circuits, including motor control, battery protection, and load switching. Its high withstand voltage and reasonable on-resistance enable it to operate reliably under high voltage and current conditions, making it suitable for application scenarios that require high withstand voltage switches.
3. **LED drive**: In LED drive circuits, the high withstand voltage and low on-resistance characteristics of D9N10-VB can help reduce the power loss of the drive circuit and improve the overall light efficiency and stability. It is suitable for LED drive applications that require high voltage and medium current, ensuring efficient current control and system stability.
4. **Inverter**: In inverter design, D9N10-VB can handle high voltage and medium current loads, and is suitable for high voltage inverter design. Its stable switching characteristics and good on-resistance help improve the efficiency and reliability of the inverter, and is suitable for various power conversion and inversion applications.
Through the examples of the above application fields, it can be seen that D9N10-VB performs well in high voltage, high withstand voltage and power conversion applications, and is an ideal choice in these fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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