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D95NH02L-VB TO252 Product details
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Product Introduction
**D95NH02L-VB** is a high-performance N-Channel MOSFET in a TO252 package. It is designed for low-voltage, high-current applications, can withstand a maximum drain-source voltage of 20V, and provide a maximum drain current of up to 100A. The on-resistance (RDS(ON)) of the MOSFET is 6mΩ at VGS = 2.5V and 4.5mΩ at VGS = 4.5V, showing that the on-resistance can be maintained low even at low gate voltages. The threshold voltage (Vth) ranges from 0.5~1.5V, ensuring that it can operate efficiently under low voltage drive. Using Trench technology, this MOSFET is suitable for high-efficiency and high-reliability switching applications.
**D95NH02L-VB** is a high-performance N-Channel MOSFET in a TO252 package. It is designed for low-voltage, high-current applications, can withstand a maximum drain-source voltage of 20V, and provide a maximum drain current of up to 100A. The on-resistance (RDS(ON)) of the MOSFET is 6mΩ at VGS = 2.5V and 4.5mΩ at VGS = 4.5V, showing that the on-resistance can be maintained low even at low gate voltages. The threshold voltage (Vth) ranges from 0.5~1.5V, ensuring that it can operate efficiently under low voltage drive. Using Trench technology, this MOSFET is suitable for high-efficiency and high-reliability switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 2.5V
- 4.5mΩ @ VGS = 4.5V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 2.5V
- 4.5mΩ @ VGS = 4.5V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **DC-DC converter**: The D95NH02L-VB is ideal for use in DC-DC converters, especially where low voltage and high current conversion is required. Its low on-resistance can significantly reduce conversion losses and improve conversion efficiency, making it ideal for use in high-efficiency power management modules.
2. **Power management**: In power management systems, this MOSFET can be used as a high-current switch, such as in power switching circuits or overcurrent protection circuits. Its high leakage current capability and low on-resistance enable it to handle high current loads while maintaining low power consumption and high efficiency.
3. **Electric vehicle (EV) applications**: In the electric drive system of electric vehicles, the D95NH02L-VB can take on high current tasks in motor drives and battery management systems. Its leakage current capability of up to 100A and low on-resistance are ideal for high-power switching and protection circuits.
4. **High-efficiency switching circuit**: This MOSFET is also suitable for various high-efficiency switching circuits, such as inverters and power amplifiers. Its low on-resistance and high current carrying capacity can effectively improve the performance of the circuit, reduce energy loss and improve the reliability of the overall system.
1. **DC-DC converter**: The D95NH02L-VB is ideal for use in DC-DC converters, especially where low voltage and high current conversion is required. Its low on-resistance can significantly reduce conversion losses and improve conversion efficiency, making it ideal for use in high-efficiency power management modules.
2. **Power management**: In power management systems, this MOSFET can be used as a high-current switch, such as in power switching circuits or overcurrent protection circuits. Its high leakage current capability and low on-resistance enable it to handle high current loads while maintaining low power consumption and high efficiency.
3. **Electric vehicle (EV) applications**: In the electric drive system of electric vehicles, the D95NH02L-VB can take on high current tasks in motor drives and battery management systems. Its leakage current capability of up to 100A and low on-resistance are ideal for high-power switching and protection circuits.
4. **High-efficiency switching circuit**: This MOSFET is also suitable for various high-efficiency switching circuits, such as inverters and power amplifiers. Its low on-resistance and high current carrying capacity can effectively improve the performance of the circuit, reduce energy loss and improve the reliability of the overall system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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