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D90N02L-VB Product details
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Product Introduction
**D90N02L-VB** is a high-performance single N-channel MOSFET with TO252 package type and Trench technology. This MOSFET operates at a drain-source voltage of 20V and has excellent low on-resistance and high current carrying capacity. Its low RDS(ON) makes it suitable for applications requiring high efficiency and low power consumption, especially for use in power switches and power management systems.
**D90N02L-VB** is a high-performance single N-channel MOSFET with TO252 package type and Trench technology. This MOSFET operates at a drain-source voltage of 20V and has excellent low on-resistance and high current carrying capacity. Its low RDS(ON) makes it suitable for applications requiring high efficiency and low power consumption, especially for use in power switches and power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: D90N02L-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 0.5V to 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 2.5V
- 4.5mΩ @ VGS = 4.5V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench technology
- **Model**: D90N02L-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 0.5V to 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 2.5V
- 4.5mΩ @ VGS = 4.5V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
**1. Power management system**: Due to its extremely low on-resistance, the D90N02L-VB can significantly reduce energy loss and improve system efficiency in power management systems. It is suitable for high-power DC-DC converters and high-efficiency switching power supplies (SMPS), especially in situations where high current transmission is required.
**2. Electric vehicles (EV)**: In electric vehicles, this MOSFET can be used as a switching element in the motor drive system. Its high current carrying capacity and low on-resistance help improve the overall efficiency of the electric vehicle power system and help extend battery life.
**3. High-frequency switching circuits**: Due to its low on-resistance and fast switching characteristics, the D90N02L-VB is ideally suited for high-frequency switching circuits such as switch mode power supplies (SMPS) and radio frequency (RF) applications to provide stable performance and reduce power consumption.
**4. Computer and Communication Equipment**: In the power distribution system of computer and communication equipment, this MOSFET can effectively handle high current loads and ensure the stability and reliability of the power management system. Suitable for processor power management and power protection modules.
These application scenarios demonstrate the high efficiency and wide applicability of the D90N02L-VB MOSFET, making it a key electronic component in multiple modern electronic systems.
**1. Power management system**: Due to its extremely low on-resistance, the D90N02L-VB can significantly reduce energy loss and improve system efficiency in power management systems. It is suitable for high-power DC-DC converters and high-efficiency switching power supplies (SMPS), especially in situations where high current transmission is required.
**2. Electric vehicles (EV)**: In electric vehicles, this MOSFET can be used as a switching element in the motor drive system. Its high current carrying capacity and low on-resistance help improve the overall efficiency of the electric vehicle power system and help extend battery life.
**3. High-frequency switching circuits**: Due to its low on-resistance and fast switching characteristics, the D90N02L-VB is ideally suited for high-frequency switching circuits such as switch mode power supplies (SMPS) and radio frequency (RF) applications to provide stable performance and reduce power consumption.
**4. Computer and Communication Equipment**: In the power distribution system of computer and communication equipment, this MOSFET can effectively handle high current loads and ensure the stability and reliability of the power management system. Suitable for processor power management and power protection modules.
These application scenarios demonstrate the high efficiency and wide applicability of the D90N02L-VB MOSFET, making it a key electronic component in multiple modern electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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