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D8P06E-VB TO252 Product details

Product introduction:

D8P06E-VB is a high-performance P-Channel MOSFET in a TO252 package. It has a drain-source voltage (VDS) of -60V and a continuous drain current (ID) of up to -30A, suitable for high current and high voltage applications. This MOSFET uses advanced Trench technology to provide a low RDS(ON) value, ensuring high efficiency and low power operation. Its threshold voltage (Vth) is -1.7V, enabling it to turn on at a lower gate voltage. This MOSFET is particularly suitable for applications requiring high switching speeds and low on-resistance.



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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-P -60V -1.7V -30A 100mΩ 90mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-P -60V -1.7V -30A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-P -60V -1.7V -30A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-P

Detailed parameter description

- **Package**: TO252

- **Configuration**: Unipolar P-Channel

- **Drain-source voltage (VDS)**: -60V

- **Gate-source voltage (VGS)**: ±20V

- **Threshold voltage (Vth)**: -1.7V

- **On-resistance (RDS(ON))**:

- 100mΩ (at VGS=4.5V)

- 90mΩ (at VGS=10V)

- **Continuous leakage current (ID)**: -30A

- **Technology**: Trench



Domain and module applications:


Applicable fields and modules

The low on-resistance and high current capability of the **D8P06E-VB** MOSFET make it particularly suitable for the following fields and modules:

1. **Power management**:

- Used for power switches, especially in DC-DC converters that require high current, to improve conversion efficiency and reduce power consumption.

- As a power switch in battery-powered devices, it can reduce energy loss and extend battery life.

2. **Power amplifier**:

- Used in the output stage of power amplifiers to provide high current drive capability and reduce heat generation, thereby improving the reliability and efficiency of the overall system.

3. **Automotive electronics**:

- In automotive power management systems, it is used as a load switch to control the current flow to various automotive electronic modules, such as lighting systems and auxiliary power devices.

- Can be used in automotive inverters and electric drive systems to improve the power density and efficiency of the system.

4. **Consumer Electronics**:

- Used as a power management component in various consumer electronic devices, such as smartphones and laptops, to provide efficient power switching functions.

- In high-performance computing devices, control power distribution to improve the overall performance and stability of the device.


By applying **D8P06E-VB** MOSFET, more efficient power management can be achieved, power consumption can be reduced, and the overall performance and reliability of the system can be improved.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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