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D80N04DA-VB Product details
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Product Introduction
**D80N04DA-VB** is a high-performance N-channel MOSFET in TO252 package. It is based on advanced Trench technology, provides efficient current control and low on-resistance, and is suitable for high-current, high-frequency power conversion applications. This MOSFET has excellent performance in the operating voltage and current range, and is suitable for various power management and switching circuits.
**D80N04DA-VB** is a high-performance N-channel MOSFET in TO252 package. It is based on advanced Trench technology, provides efficient current control and low on-resistance, and is suitable for high-current, high-frequency power conversion applications. This MOSFET has excellent performance in the operating voltage and current range, and is suitable for various power management and switching circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: D80N04DA-VB
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (V_DS)**: 40V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 2.5V
- **On-resistance (R_DS(on))**:
- 6mΩ @ V_GS = 4.5V
- 5mΩ @ V_GS = 10V
- **Maximum leakage current (I_D)**: 85A
- **Technology**: Trench
- **Model**: D80N04DA-VB
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (V_DS)**: 40V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 2.5V
- **On-resistance (R_DS(on))**:
- 6mΩ @ V_GS = 4.5V
- 5mΩ @ V_GS = 10V
- **Maximum leakage current (I_D)**: 85A
- **Technology**: Trench
Domain and module applications：
Applications and Modules
1. **Power Management System**: The low on-resistance and high current capability of the D80N04DA-VB make it ideal for use in power management modules such as DC-DC converters and power switches. In these applications, MOSFETs can effectively reduce power losses and improve the overall efficiency of the system.
2. **Switching Circuit**: This MOSFET is widely used in switching circuits such as motor drives, battery management systems, and power switches. Its high current carrying capacity and low on-resistance ensure good performance in high-frequency switching operations, capable of handling large current loads and reducing switching losses.
3. **LED Driver**: The D80N04DA-VB is also suitable for LED driver circuits, especially in applications requiring efficient current control. Its low R_DS(on) characteristics help reduce power losses in LED driver circuits, improve light efficiency and system reliability.
4. **Inverter**: In inverter applications, the high current handling capability and low on-resistance of this MOSFET make it an ideal choice for high-efficiency inverter designs, effectively handling high-power loads and improving the overall efficiency of the system.
Through these application areas and module examples, it can be seen that the D80N04DA-VB performs well in power conversion and switching applications that require high current and high efficiency, and is a reliable choice.
1. **Power Management System**: The low on-resistance and high current capability of the D80N04DA-VB make it ideal for use in power management modules such as DC-DC converters and power switches. In these applications, MOSFETs can effectively reduce power losses and improve the overall efficiency of the system.
2. **Switching Circuit**: This MOSFET is widely used in switching circuits such as motor drives, battery management systems, and power switches. Its high current carrying capacity and low on-resistance ensure good performance in high-frequency switching operations, capable of handling large current loads and reducing switching losses.
3. **LED Driver**: The D80N04DA-VB is also suitable for LED driver circuits, especially in applications requiring efficient current control. Its low R_DS(on) characteristics help reduce power losses in LED driver circuits, improve light efficiency and system reliability.
4. **Inverter**: In inverter applications, the high current handling capability and low on-resistance of this MOSFET make it an ideal choice for high-efficiency inverter designs, effectively handling high-power loads and improving the overall efficiency of the system.
Through these application areas and module examples, it can be seen that the D80N04DA-VB performs well in power conversion and switching applications that require high current and high efficiency, and is a reliable choice.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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