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D7S60-VB Product details
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Product Introduction
**D7S60-VB** is a high voltage N-Channel MOSFET in TO251 package. It has a drain-source voltage withstand capability of up to 650V and a maximum drain current of 7A. The on-resistance (RDS(ON)) of the MOSFET is 700mΩ at VGS = 10V, which exhibits lower power consumption and heat in high current applications. Its threshold voltage (Vth) is 3.5V, ensuring that it is reliably turned on at the appropriate gate voltage. The D7S60-VB adopts SJ_Multi-EPI technology, providing excellent voltage resistance and thermal stability, suitable for a variety of high power and high voltage applications.
**D7S60-VB** is a high voltage N-Channel MOSFET in TO251 package. It has a drain-source voltage withstand capability of up to 650V and a maximum drain current of 7A. The on-resistance (RDS(ON)) of the MOSFET is 700mΩ at VGS = 10V, which exhibits lower power consumption and heat in high current applications. Its threshold voltage (Vth) is 3.5V, ensuring that it is reliably turned on at the appropriate gate voltage. The D7S60-VB adopts SJ_Multi-EPI technology, providing excellent voltage resistance and thermal stability, suitable for a variety of high power and high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package**: TO251
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 700mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
- **Package**: TO251
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 700mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **High-voltage power conversion**: The D7S60-VB is ideal for use in high-voltage power conversion applications such as power adapters and switching power modules. It can withstand drain-source voltages up to 650V and has low on-resistance at high currents, which can effectively reduce power loss and heat generation and improve power conversion efficiency.
2. **Motor drive**: In motor drive systems, the high current capability (7A) and high voltage tolerance of the D7S60-VB make it an ideal choice. It can be used in the motor drive circuits of electric vehicles (EVs) to support the starting and operation of the motor with stable and reliable performance.
3. **Inverter**: In inverter applications, the high voltage and high current specifications of the D7S60-VB enable it to effectively handle DC to AC conversion tasks. Its high voltage tolerance can meet the needs of inverters in high power and high voltage environments, thereby ensuring the stability and efficiency of the inverter.
4. **High power switching circuit**: This MOSFET is also suitable for high power switching circuits, such as high power power amplifiers. Its low RDS(ON) characteristics can provide effective switching control under high power loads, ensuring the stability and reliability of the circuit during high power operation.
1. **High-voltage power conversion**: The D7S60-VB is ideal for use in high-voltage power conversion applications such as power adapters and switching power modules. It can withstand drain-source voltages up to 650V and has low on-resistance at high currents, which can effectively reduce power loss and heat generation and improve power conversion efficiency.
2. **Motor drive**: In motor drive systems, the high current capability (7A) and high voltage tolerance of the D7S60-VB make it an ideal choice. It can be used in the motor drive circuits of electric vehicles (EVs) to support the starting and operation of the motor with stable and reliable performance.
3. **Inverter**: In inverter applications, the high voltage and high current specifications of the D7S60-VB enable it to effectively handle DC to AC conversion tasks. Its high voltage tolerance can meet the needs of inverters in high power and high voltage environments, thereby ensuring the stability and efficiency of the inverter.
4. **High power switching circuit**: This MOSFET is also suitable for high power switching circuits, such as high power power amplifiers. Its low RDS(ON) characteristics can provide effective switching control under high power loads, ensuring the stability and reliability of the circuit during high power operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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