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D7NM80-VB TO252 Product details
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Product Introduction
**D7NM80-VB** is a unipolar N-channel MOSFET in TO252 package. Its maximum drain-to-source voltage (VDS) is 800V, which is suitable for high voltage scenarios. This MOSFET is equipped with SJ_Multi-EPI technology and has good conduction performance and high voltage resistance. Its threshold voltage (Vth) is 3.5V, enabling it to work effectively under medium and low voltage conditions. The on-resistance (RDS(ON)) of D7NM80-VB is 770mΩ (at VGS=10V) and has a maximum drain current (ID) of 7A. This MOSFET is mainly used for switching and power regulation in high voltage applications.
**D7NM80-VB** is a unipolar N-channel MOSFET in TO252 package. Its maximum drain-to-source voltage (VDS) is 800V, which is suitable for high voltage scenarios. This MOSFET is equipped with SJ_Multi-EPI technology and has good conduction performance and high voltage resistance. Its threshold voltage (Vth) is 3.5V, enabling it to work effectively under medium and low voltage conditions. The on-resistance (RDS(ON)) of D7NM80-VB is 770mΩ (at VGS=10V) and has a maximum drain current (ID) of 7A. This MOSFET is mainly used for switching and power regulation in high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 7A | 770mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: D7NM80-VB
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Maximum drain to source voltage (VDS)**: 800V
- **Maximum gate to source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 770mΩ (VGS=10V)
- **Maximum drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
- **Model**: D7NM80-VB
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Maximum drain to source voltage (VDS)**: 800V
- **Maximum gate to source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 770mΩ (VGS=10V)
- **Maximum drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
**D7NM80-VB** is suitable for a variety of high voltage and power management applications, including:
1. **Switching power supply**:
- In switching power supply modules, the D7NM80-VB can withstand voltages up to 800V, making it suitable for power converters with high voltage outputs. Its low on-resistance helps improve efficiency and reduce power consumption.
2. **Power regulator**:
- In power regulators, this MOSFET can be used as a switching element to adjust power distribution and control. Its high drain current capability and high voltage tolerance enable it to operate stably in a variety of power regulation situations.
3. **Electric vehicle charger**:
- In electric vehicle chargers, the D7NM80-VB can handle high voltage currents and ensure stable operation during charging. This helps improve charging efficiency and safety.
4. **Industrial Equipment**:
- In industrial equipment, this MOSFET can be used to control high voltage loads such as motor drives and high power devices. Its high voltage resistance makes it suitable for industrial applications that require high voltage protection.
5. **Inverter**:
- In inverter applications, the D7NM80-VB can be used to convert DC to AC. Its high voltage and high current handling capabilities make it suitable for high power inverter designs.
These application scenarios show the wide applicability of the D7NM80-VB in high voltage and high power environments, supporting a variety of electrical and electronic systems that require stable performance.
**D7NM80-VB** is suitable for a variety of high voltage and power management applications, including:
1. **Switching power supply**:
- In switching power supply modules, the D7NM80-VB can withstand voltages up to 800V, making it suitable for power converters with high voltage outputs. Its low on-resistance helps improve efficiency and reduce power consumption.
2. **Power regulator**:
- In power regulators, this MOSFET can be used as a switching element to adjust power distribution and control. Its high drain current capability and high voltage tolerance enable it to operate stably in a variety of power regulation situations.
3. **Electric vehicle charger**:
- In electric vehicle chargers, the D7NM80-VB can handle high voltage currents and ensure stable operation during charging. This helps improve charging efficiency and safety.
4. **Industrial Equipment**:
- In industrial equipment, this MOSFET can be used to control high voltage loads such as motor drives and high power devices. Its high voltage resistance makes it suitable for industrial applications that require high voltage protection.
5. **Inverter**:
- In inverter applications, the D7NM80-VB can be used to convert DC to AC. Its high voltage and high current handling capabilities make it suitable for high power inverter designs.
These application scenarios show the wide applicability of the D7NM80-VB in high voltage and high power environments, supporting a variety of electrical and electronic systems that require stable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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