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D7NM80-VB TO251 Product details
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D7NM80-VB MOSFET Product Introduction
D7NM80-VB is a high-performance N-channel power MOSFET in TO251 package. This MOSFET has a high voltage withstand capability of 800V and is suitable for high-voltage applications. It uses advanced Super Junction (SJ_Multi-EPI) technology, has excellent switching performance and low on-resistance characteristics, and can provide stable current output at higher voltages. This model is suitable for various power management systems that require high efficiency and high reliability.
D7NM80-VB is a high-performance N-channel power MOSFET in TO251 package. This MOSFET has a high voltage withstand capability of 800V and is suitable for high-voltage applications. It uses advanced Super Junction (SJ_Multi-EPI) technology, has excellent switching performance and low on-resistance characteristics, and can provide stable current output at higher voltages. This model is suitable for various power management systems that require high efficiency and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 7A | 850mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
D7NM80-VB MOSFET Detailed parameter description
- **Package type (Package): ** TO251
- **Configuration (Configuration): ** Single N-Channel
- **Drain-Source Voltage (VDS): ** 800V
- **Gate-Source Voltage (VGS): ** ±30V
- **Threshold Voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 850mΩ @ VGS=10V
- **Continuous Drain Current (ID): ** 7A
- **Technology (Technology): ** Superjunction Multi-Epitaxial Technology (SJ_Multi-EPI)
- **Package type (Package): ** TO251
- **Configuration (Configuration): ** Single N-Channel
- **Drain-Source Voltage (VDS): ** 800V
- **Gate-Source Voltage (VGS): ** ±30V
- **Threshold Voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 850mΩ @ VGS=10V
- **Continuous Drain Current (ID): ** 7A
- **Technology (Technology): ** Superjunction Multi-Epitaxial Technology (SJ_Multi-EPI)
Domain and module applications：
D7NM80-VB MOSFET Applicable fields and application modules
D7NM80-VB MOSFET is suitable for a variety of high-voltage and high-efficiency application scenarios due to its high voltage tolerance and low on-resistance. For example:
1. **Power Converters:** In high-voltage DC-DC converters, D7NM80-VB can be used as the main switching element to provide efficient power conversion while ensuring stability under high voltage.
2. **Uninterruptible Power Supply (UPS):** In UPS systems, this MOSFET can be used in rectification and inverter modules to ensure that the system can still provide stable power output when the power supply is interrupted.
3. **Switching Power Supply (SMPS):** D7NM80-VB is suitable for the high-voltage side switch in the switching power supply, which can effectively reduce switching losses and improve system efficiency.
4. **Lighting Systems:** In LED drive circuits, D7NM80-VB can be used as the main switch to improve the power density and efficiency of the circuit and meet the needs of modern energy-saving lighting.
5. **Industrial Automation:** In industrial control equipment that needs to process high-voltage signals, this MOSFET can ensure the reliable operation of the equipment and is suitable for driving motors and high-voltage parts of controllers.
Through these application scenarios, we can see the important role of D7NM80-VB MOSFET in the field of high efficiency and high reliability.
D7NM80-VB MOSFET is suitable for a variety of high-voltage and high-efficiency application scenarios due to its high voltage tolerance and low on-resistance. For example:
1. **Power Converters:** In high-voltage DC-DC converters, D7NM80-VB can be used as the main switching element to provide efficient power conversion while ensuring stability under high voltage.
2. **Uninterruptible Power Supply (UPS):** In UPS systems, this MOSFET can be used in rectification and inverter modules to ensure that the system can still provide stable power output when the power supply is interrupted.
3. **Switching Power Supply (SMPS):** D7NM80-VB is suitable for the high-voltage side switch in the switching power supply, which can effectively reduce switching losses and improve system efficiency.
4. **Lighting Systems:** In LED drive circuits, D7NM80-VB can be used as the main switch to improve the power density and efficiency of the circuit and meet the needs of modern energy-saving lighting.
5. **Industrial Automation:** In industrial control equipment that needs to process high-voltage signals, this MOSFET can ensure the reliable operation of the equipment and is suitable for driving motors and high-voltage parts of controllers.
Through these application scenarios, we can see the important role of D7NM80-VB MOSFET in the field of high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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