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D7NM50N-VB TO251 Product details
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Product Introduction
The D7NM50N-VB is a single N-channel MOSFET in a TO251 package and superjunction (SJ) multi-epitaxial (Multi-EPI) technology. This MOSFET is designed for high-voltage applications and supports drain-source voltages (VDS) up to 650V and gate-source voltages (VGS) of ±30V. It has a gate threshold voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 700mΩ at a VGS of 10V, and can withstand a drain current (ID) of 7A. This type of MOSFET is ideal for applications that require high voltage handling capabilities and high switching efficiency.
The D7NM50N-VB is a single N-channel MOSFET in a TO251 package and superjunction (SJ) multi-epitaxial (Multi-EPI) technology. This MOSFET is designed for high-voltage applications and supports drain-source voltages (VDS) up to 650V and gate-source voltages (VGS) of ±30V. It has a gate threshold voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 700mΩ at a VGS of 10V, and can withstand a drain current (ID) of 7A. This type of MOSFET is ideal for applications that require high voltage handling capabilities and high switching efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 700mΩ @ VGS=10V
- **Drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 700mΩ @ VGS=10V
- **Drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **High-voltage power converters**: The D7NM50N-VB is ideal for high-voltage power converters, especially in scenarios where high-voltage DC-DC conversion (DC-DC conversion) is required in power grids. Its high voltage withstand capability ensures stable operation under high voltage conditions and maintains low conduction losses under high power loads.
2. **Industrial power modules**: The high voltage handling capability and stable performance of the D7NM50N-VB make it an ideal choice in industrial power modules such as high-voltage inverters and power management systems. This MOSFET can provide efficient power conversion and ensure long-term stable operation of equipment in harsh working environments.
3. **New energy systems**: The D7NM50N-VB is suitable for new energy systems such as solar inverters and wind power converters. Its high drain-source voltage and switching efficiency support efficient power conversion, making this component widely used in new energy systems.
4. **Home appliances and consumer electronics**: In the power management modules of home appliances and consumer electronics, the D7NM50N-VB can provide overvoltage protection to ensure the safety of the equipment when the grid voltage fluctuates. This makes it widely used in high-voltage power protection circuits, helping to improve the safety and reliability of products.
1. **High-voltage power converters**: The D7NM50N-VB is ideal for high-voltage power converters, especially in scenarios where high-voltage DC-DC conversion (DC-DC conversion) is required in power grids. Its high voltage withstand capability ensures stable operation under high voltage conditions and maintains low conduction losses under high power loads.
2. **Industrial power modules**: The high voltage handling capability and stable performance of the D7NM50N-VB make it an ideal choice in industrial power modules such as high-voltage inverters and power management systems. This MOSFET can provide efficient power conversion and ensure long-term stable operation of equipment in harsh working environments.
3. **New energy systems**: The D7NM50N-VB is suitable for new energy systems such as solar inverters and wind power converters. Its high drain-source voltage and switching efficiency support efficient power conversion, making this component widely used in new energy systems.
4. **Home appliances and consumer electronics**: In the power management modules of home appliances and consumer electronics, the D7NM50N-VB can provide overvoltage protection to ensure the safety of the equipment when the grid voltage fluctuates. This makes it widely used in high-voltage power protection circuits, helping to improve the safety and reliability of products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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