D7N65-VB Product details
Product introduction:
The D7N65-VB is a high-voltage N-channel MOSFET in TO252 package, designed for high-voltage applications. Its single N-channel configuration enables it to perform well in high-voltage and high-power applications, and is suitable for a variety of power management and conversion applications. The device has a drain-source voltage (VDS) of up to 650V, a gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V, ensuring stable operation at an appropriate gate voltage. The D7N65-VB has an on-resistance (RDS(ON)) of 500mΩ at a 10V gate drive and can handle a drain current (ID) of up to 9A. Using super junction multi-epitaxial (SJ_Multi-EPI) technology, the D7N65-VB has low conduction losses and excellent switching performance, making it suitable for high-efficiency power conversion and control applications.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 500mΩ @ VGS=10V
- **Drain current (ID)**: 9A
- **Technology**: Superjunction multi-epitaxial (SJ_Multi-EPI)
Domain and module applications:
1. **Switching Mode Power Supply (SMPS)**: D7N65-VB is ideal for high voltage switching elements in switching mode power supplies (SMPS). Its 650V high voltage capability and low on-resistance characteristics make it excel in power conversion with high voltage input and widely used in industrial power supplies, communication equipment power supplies, and consumer electronics power supplies.
2. **Power Conversion**: The high voltage characteristics and reliability of this MOSFET make it widely used in power conversion modules such as inverters, power factor correction (PFC) circuits, and high voltage DC-DC converters. Its high efficiency and low loss characteristics can significantly improve the efficiency of the system.
3. **Motor Control**: D7N65-VB is suitable for motor drive applications that require high voltage control, such as motor drives in industrial automation and compressor control in home appliances. Its 9A current handling capability can meet the needs of most motor controls and ensure stable operation of the system.
4. **High-voltage lighting system**: In high-voltage LED lighting and other high-voltage lighting applications, D7N65-VB can provide reliable power management and switch control to ensure the reliability and long life of the system in high-voltage working environments.
In summary, D7N65-VB MOSFET is widely used in switching power supplies, power conversion, motor control and high-voltage lighting systems due to its high voltage handling capability, low conduction loss and excellent switching performance. Its versatility and high efficiency make it an ideal choice for high-voltage applications.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image