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D7N65-VB Product details

Product introduction:

D7N65-VB MOSFET Product Introduction



The D7N65-VB is a high-voltage N-channel MOSFET in TO252 package, designed for high-voltage applications. Its single N-channel configuration enables it to perform well in high-voltage and high-power applications, and is suitable for a variety of power management and conversion applications. The device has a drain-source voltage (VDS) of up to 650V, a gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V, ensuring stable operation at an appropriate gate voltage. The D7N65-VB has an on-resistance (RDS(ON)) of 500mΩ at a 10V gate drive and can handle a drain current (ID) of up to 9A. Using super junction multi-epitaxial (SJ_Multi-EPI) technology, the D7N65-VB has low conduction losses and excellent switching performance, making it suitable for high-efficiency power conversion and control applications.



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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 650V 3.5V 9A 500mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 650V 3.5V 9A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 650V 3.5V 9A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
D7N65-VB MOSFET Detailed parameter description



- **Package type**: TO252

- **Configuration**: Single N-channel

- **Drain-source voltage (VDS)**: 650V

- **Gate-source voltage (VGS)**: ±30V

- **Threshold voltage (Vth)**: 3.5V

- **On-resistance (RDS(ON))**:

- 500mΩ @ VGS=10V

- **Drain current (ID)**: 9A

- **Technology**: Superjunction multi-epitaxial (SJ_Multi-EPI)



Domain and module applications:

Applications and modules of D7N65-VB MOSFET



1. **Switching Mode Power Supply (SMPS)**: D7N65-VB is ideal for high voltage switching elements in switching mode power supplies (SMPS). Its 650V high voltage capability and low on-resistance characteristics make it excel in power conversion with high voltage input and widely used in industrial power supplies, communication equipment power supplies, and consumer electronics power supplies.



2. **Power Conversion**: The high voltage characteristics and reliability of this MOSFET make it widely used in power conversion modules such as inverters, power factor correction (PFC) circuits, and high voltage DC-DC converters. Its high efficiency and low loss characteristics can significantly improve the efficiency of the system.



3. **Motor Control**: D7N65-VB is suitable for motor drive applications that require high voltage control, such as motor drives in industrial automation and compressor control in home appliances. Its 9A current handling capability can meet the needs of most motor controls and ensure stable operation of the system.



4. **High-voltage lighting system**: In high-voltage LED lighting and other high-voltage lighting applications, D7N65-VB can provide reliable power management and switch control to ensure the reliability and long life of the system in high-voltage working environments.



In summary, D7N65-VB MOSFET is widely used in switching power supplies, power conversion, motor control and high-voltage lighting systems due to its high voltage handling capability, low conduction loss and excellent switching performance. Its versatility and high efficiency make it an ideal choice for high-voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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