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D70NH02L-VB Product details
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D70NH02L-VB MOSFET Product Introduction
The D70NH02L-VB is a high-performance N-Channel MOSFET in a TO252 package, ideal for low-voltage applications that require high current delivery and low on-resistance. The device has a maximum drain-source voltage (VDS) of 20V and supports a gate-source voltage (VGS) range of ±20V, providing a wide range of control flexibility. Its threshold voltage (Vth) range is 0.5V to 1.5V, ensuring reliable turn-on under low gate voltage conditions. The on-resistance (RDS(ON)) of this MOSFET is 6mΩ at VGS=2.5V and 4.5mΩ at VGS=4.5V, ensuring low power consumption and high-efficiency current control capability. The maximum continuous drain current (ID) is 100A, which can cope with high current load requirements. Manufactured using Trench technology, it provides excellent switching performance and high efficiency.
The D70NH02L-VB is a high-performance N-Channel MOSFET in a TO252 package, ideal for low-voltage applications that require high current delivery and low on-resistance. The device has a maximum drain-source voltage (VDS) of 20V and supports a gate-source voltage (VGS) range of ±20V, providing a wide range of control flexibility. Its threshold voltage (Vth) range is 0.5V to 1.5V, ensuring reliable turn-on under low gate voltage conditions. The on-resistance (RDS(ON)) of this MOSFET is 6mΩ at VGS=2.5V and 4.5mΩ at VGS=4.5V, ensuring low power consumption and high-efficiency current control capability. The maximum continuous drain current (ID) is 100A, which can cope with high current load requirements. Manufactured using Trench technology, it provides excellent switching performance and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
1. **Package:** TO252
- **Description:** Surface mount package with good heat dissipation performance, suitable for high current applications.
2. **Configuration:** Single N-Channel
- **Description:** Single N-Channel configuration, suitable for low voltage switching and control applications.
3. **Drain-Source Voltage (VDS):** 20V
- **Description:** Maximum voltage allowed between drain and source, suitable for switching operation in low voltage environment.
4. **Gate-Source Voltage (VGS):** ±20V
- **Description:** Maximum voltage range allowed between gate and source, providing wide control flexibility.
5. **Threshold voltage (Vth):** 0.5~1.5V
- **Description:** The gate voltage at which the MOSFET starts to conduct, suitable for low gate voltage applications.
6. **On-resistance (RDS(ON)):**
- **6mΩ @ VGS=2.5V:** The on-resistance at VGS=2.5V, providing low power current control.
- **4.5mΩ @ VGS=4.5V:** The on-resistance at VGS=4.5V, further reducing power consumption and improving efficiency.
7. **Continuous drain current (ID):** 100A
- **Description:** The maximum current that the device can continuously conduct under specific conditions, suitable for applications with high current requirements.
8. **Technology:** Trench
- **Description:** Manufactured using Trench technology, it provides low on-resistance and high switching efficiency, suitable for high-performance applications.
1. **Package:** TO252
- **Description:** Surface mount package with good heat dissipation performance, suitable for high current applications.
2. **Configuration:** Single N-Channel
- **Description:** Single N-Channel configuration, suitable for low voltage switching and control applications.
3. **Drain-Source Voltage (VDS):** 20V
- **Description:** Maximum voltage allowed between drain and source, suitable for switching operation in low voltage environment.
4. **Gate-Source Voltage (VGS):** ±20V
- **Description:** Maximum voltage range allowed between gate and source, providing wide control flexibility.
5. **Threshold voltage (Vth):** 0.5~1.5V
- **Description:** The gate voltage at which the MOSFET starts to conduct, suitable for low gate voltage applications.
6. **On-resistance (RDS(ON)):**
- **6mΩ @ VGS=2.5V:** The on-resistance at VGS=2.5V, providing low power current control.
- **4.5mΩ @ VGS=4.5V:** The on-resistance at VGS=4.5V, further reducing power consumption and improving efficiency.
7. **Continuous drain current (ID):** 100A
- **Description:** The maximum current that the device can continuously conduct under specific conditions, suitable for applications with high current requirements.
8. **Technology:** Trench
- **Description:** Manufactured using Trench technology, it provides low on-resistance and high switching efficiency, suitable for high-performance applications.
Domain and module applications：
Application Examples
D70NH02L-VB MOSFET is mainly used in low voltage, high current switching and control fields. Here are some specific application examples:
1. **Power Management:**
- **Example:** In mobile devices and portable electronic products, D70NH02L-VB can be used in power management modules as an efficient switching element to control current transmission and energy conversion, provide stable power output, and minimize energy loss.
2. **DC-DC Converter:**
- **Example:** In low voltage DC-DC converters, D70NH02L-VB can be used as a switching element to improve conversion efficiency and ensure stability of low voltage output by taking advantage of its low on-resistance and high current handling capability.
3. **Motor drive:**
- **Example:** In motor drive applications, especially low voltage and high current motor control, the D70NH02L-VB can be used as the main switching element to provide strong current drive capability while maintaining low energy consumption and high efficiency.
4. **Consumer electronics:**
- **Example:** In consumer electronics such as smartphones and tablets, the D70NH02L-VB is a key component in power management and control modules to ensure long battery life and high performance.
The low on-resistance and high current handling capability of the D70NH02L-VB make it an ideal choice for low voltage and high current applications. Whether in power management, DC-DC converters, motor drives, or consumer electronics, this MOSFET can provide excellent performance and high efficiency.
D70NH02L-VB MOSFET is mainly used in low voltage, high current switching and control fields. Here are some specific application examples:
1. **Power Management:**
- **Example:** In mobile devices and portable electronic products, D70NH02L-VB can be used in power management modules as an efficient switching element to control current transmission and energy conversion, provide stable power output, and minimize energy loss.
2. **DC-DC Converter:**
- **Example:** In low voltage DC-DC converters, D70NH02L-VB can be used as a switching element to improve conversion efficiency and ensure stability of low voltage output by taking advantage of its low on-resistance and high current handling capability.
3. **Motor drive:**
- **Example:** In motor drive applications, especially low voltage and high current motor control, the D70NH02L-VB can be used as the main switching element to provide strong current drive capability while maintaining low energy consumption and high efficiency.
4. **Consumer electronics:**
- **Example:** In consumer electronics such as smartphones and tablets, the D70NH02L-VB is a key component in power management and control modules to ensure long battery life and high performance.
The low on-resistance and high current handling capability of the D70NH02L-VB make it an ideal choice for low voltage and high current applications. Whether in power management, DC-DC converters, motor drives, or consumer electronics, this MOSFET can provide excellent performance and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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