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D6NK50Z-VB Product details
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D6NK50Z-VB MOSFET Product Introduction
The D6NK50Z-VB is a high voltage single N-channel MOSFET in a TO252 package, designed using SJ_Multi-EPI technology. The MOSFET can withstand drain-source voltages (VDS) up to 650V and has a maximum drain current (ID) of 5A. Its threshold voltage (Vth) is 3.5V and on-resistance is 1000mΩ (at VGS=10V), enabling it to provide stable and efficient performance when handling high voltage switching and control tasks. The D6NK50Z-VB is particularly suitable for applications that require high voltage and reliability, such as power management and high voltage control systems.
The D6NK50Z-VB is a high voltage single N-channel MOSFET in a TO252 package, designed using SJ_Multi-EPI technology. The MOSFET can withstand drain-source voltages (VDS) up to 650V and has a maximum drain current (ID) of 5A. Its threshold voltage (Vth) is 3.5V and on-resistance is 1000mΩ (at VGS=10V), enabling it to provide stable and efficient performance when handling high voltage switching and control tasks. The D6NK50Z-VB is particularly suitable for applications that require high voltage and reliability, such as power management and high voltage control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
D6NK50Z-VB MOSFET Detailed parameter description
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1000mΩ @ VGS = 10V
- **Drain current (ID)**: 5A
- **Technology type**: SJ_Multi-EPI
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1000mΩ @ VGS = 10V
- **Drain current (ID)**: 5A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
D6NK50Z-VB MOSFET Applications and Modules
The high voltage handling capability and stable electrical performance of D6NK50Z-VB MOSFET make it outstanding in multiple high voltage applications. Here are some typical application scenarios:
1. **High Voltage Power Switching**: In high voltage power switching systems, D6NK50Z-VB can be used for power converters and switching power supplies. Its high voltage tolerance ensures stable switching operation in high voltage environments, optimizing the efficiency and safety of power conversion.
2. **Power Protection and Control**: D6NK50Z-VB can be used in power protection circuits such as overvoltage protection and current limiting. Its high voltage tolerance and low on-resistance enable it to effectively protect the power supply from abnormal voltage and current.
3. **High Voltage Load Switching**: In applications that require high voltage load switching, the D6NK50Z-VB is able to safely control high power loads. Its stable switching performance and high voltage tolerance are suitable for motor drives and other high voltage load control scenarios.
4. **Industrial Power Control**: In industrial automation and power control systems, the D6NK50Z-VB is suitable for switching control of high voltage equipment. Its high voltage resistance and reliability make it an ideal choice for handling high voltage power systems.
These application scenarios show the wide application of the D6NK50Z-VB MOSFET in high voltage power switching, power protection, high voltage load switching, and industrial power control. Its high voltage handling capability and stability make it an important component in these fields.
The high voltage handling capability and stable electrical performance of D6NK50Z-VB MOSFET make it outstanding in multiple high voltage applications. Here are some typical application scenarios:
1. **High Voltage Power Switching**: In high voltage power switching systems, D6NK50Z-VB can be used for power converters and switching power supplies. Its high voltage tolerance ensures stable switching operation in high voltage environments, optimizing the efficiency and safety of power conversion.
2. **Power Protection and Control**: D6NK50Z-VB can be used in power protection circuits such as overvoltage protection and current limiting. Its high voltage tolerance and low on-resistance enable it to effectively protect the power supply from abnormal voltage and current.
3. **High Voltage Load Switching**: In applications that require high voltage load switching, the D6NK50Z-VB is able to safely control high power loads. Its stable switching performance and high voltage tolerance are suitable for motor drives and other high voltage load control scenarios.
4. **Industrial Power Control**: In industrial automation and power control systems, the D6NK50Z-VB is suitable for switching control of high voltage equipment. Its high voltage resistance and reliability make it an ideal choice for handling high voltage power systems.
These application scenarios show the wide application of the D6NK50Z-VB MOSFET in high voltage power switching, power protection, high voltage load switching, and industrial power control. Its high voltage handling capability and stability make it an important component in these fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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