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D6N50-VB Product details

Product introduction:

1. D6N50-VB MOSFET Product Introduction

D6N50-VB is a high-voltage N-channel MOSFET in TO252 package, suitable for high-voltage switching and power management applications. It utilizes SJ_Multi-EPI technology, can handle drain-source voltage (VDS) up to 650V, and supports gate-source voltage (VGS) of ±30V. Its threshold voltage (Vth) is 3.5V, allowing it to switch effectively at higher voltages. The on-resistance (RDS(ON)) of D6N50-VB is 1000mΩ (at VGS=10V), and can handle drain current (ID) up to 5A. Designed for high-voltage and high-power applications, this MOSFET provides excellent current control and high efficiency.



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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 650V 3.5V 5A 1000mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 650V 3.5V 5A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 650V 3.5V 5A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
2. Detailed parameter description of D6N50-VB MOSFET

- **Package type**: TO252

- **Channel configuration**: Single N-channel

- **Drain-source voltage (VDS)**: 650V

- **Gate-source voltage (VGS)**: ±30V

- **Threshold voltage (Vth)**: 3.5V

- **On-resistance (RDS(ON))**: 1000mΩ @ VGS = 10V

- **Drain current (ID)**: 5A

- **Technology type**: SJ_Multi-EPI



Domain and module applications:

3. Application fields and module examples of D6N50-VB MOSFET

D6N50-VB MOSFET is suitable for multiple fields and modules due to its high withstand voltage and moderate current handling capability. Here are some main application examples:



1. **High voltage power switch**: D6N50-VB performs well in high voltage power switch applications. Its high withstand voltage capability of 650V makes it an ideal choice in power switches and AC-DC converters, capable of safely handling high voltage inputs and achieving efficient power control.



2. **Power inverter**: In power inverters, D6N50-VB is able to handle the conversion of high voltage DC power to AC. Its high voltage capability and good switching performance make it suitable for solar inverters and uninterruptible power supply (UPS) systems, ensuring that the inverter can operate stably and handle high power loads.



3. **Motor drive**: D6N50-VB is suitable for motor drive systems that require high voltage. It can effectively switch high-voltage motor loads in motor control circuits, improve motor performance and efficiency, and is suitable for starting and running control of high-voltage motors.



4. **Industrial Power Supply**: In industrial power modules, the high voltage tolerance of D6N50-VB makes it suitable for power management and switch control. It can handle the switching tasks of high-voltage power supplies in industrial environments, ensuring the reliability and stability of the power system.



5. **Battery Management System**: D6N50-VB is also used in high-voltage battery management systems, especially in protection and control circuits that require high voltage resistance. It can effectively control the switching of battery packs, provide necessary protection and management functions, and ensure the safety and performance of battery packs.



These application examples demonstrate the wide applicability of D6N50-VB MOSFET in high-voltage and high-power scenarios, making it a key component in high-voltage switching and power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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