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D60NF06-VB Product details
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D60NF06-VB MOSFET Product Introduction
The D60NF06-VB is a high-performance N-Channel MOSFET in a TO252 package, designed for medium and high current switching and control applications. Its maximum drain-source voltage (VDS) is 60V, suitable for switching operations in medium voltage environments. The gate-source voltage (VGS) range is ±20V, providing a wide range of control capabilities. The threshold voltage (Vth) of this MOSFET is 2.5V, ensuring stable turn-on under appropriate gate voltage. The on-resistance (RDS(ON)) of the D60NF06-VB is 10mΩ at VGS=10V, suitable for switching applications with low conduction losses. Its maximum continuous drain current (ID) is 58A, which can meet high current load requirements. The device uses Trench technology to provide excellent switching performance and high efficiency.
The D60NF06-VB is a high-performance N-Channel MOSFET in a TO252 package, designed for medium and high current switching and control applications. Its maximum drain-source voltage (VDS) is 60V, suitable for switching operations in medium voltage environments. The gate-source voltage (VGS) range is ±20V, providing a wide range of control capabilities. The threshold voltage (Vth) of this MOSFET is 2.5V, ensuring stable turn-on under appropriate gate voltage. The on-resistance (RDS(ON)) of the D60NF06-VB is 10mΩ at VGS=10V, suitable for switching applications with low conduction losses. Its maximum continuous drain current (ID) is 58A, which can meet high current load requirements. The device uses Trench technology to provide excellent switching performance and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
1. **Package:** TO252
- **Description:** Surface mount package with good heat dissipation performance, suitable for high current applications.
2. **Configuration:** Single N-Channel
- **Description:** Single N-Channel configuration, suitable for medium and high voltage switching and control applications.
3. **Drain-Source Voltage (VDS):** 60V
- **Description:** Maximum voltage allowed between drain and source, suitable for switching operation in medium voltage environment.
4. **Gate-Source Voltage (VGS):** ±20V
- **Description:** Maximum voltage range allowed between gate and source, providing a wide range of control capabilities.
5. **Threshold Voltage (Vth):** 2.5V
- **Description:** The gate voltage at which the MOSFET starts to conduct, suitable for low voltage switching applications.
6. **On-resistance (RDS(ON)):**
- **13mΩ @ VGS=4.5V:** The on-resistance at VGS=4.5V, providing low conduction loss.
- **10mΩ @ VGS=10V:** The on-resistance at VGS=10V, suitable for low conduction loss applications.
7. **Continuous Drain Current (ID):** 58A
- **Description:** The maximum current that the device can continuously conduct under specific conditions.
8. **Technology:** Trench
- **Description:** Trench technology provides low on-resistance and high switching efficiency, suitable for high current applications.
1. **Package:** TO252
- **Description:** Surface mount package with good heat dissipation performance, suitable for high current applications.
2. **Configuration:** Single N-Channel
- **Description:** Single N-Channel configuration, suitable for medium and high voltage switching and control applications.
3. **Drain-Source Voltage (VDS):** 60V
- **Description:** Maximum voltage allowed between drain and source, suitable for switching operation in medium voltage environment.
4. **Gate-Source Voltage (VGS):** ±20V
- **Description:** Maximum voltage range allowed between gate and source, providing a wide range of control capabilities.
5. **Threshold Voltage (Vth):** 2.5V
- **Description:** The gate voltage at which the MOSFET starts to conduct, suitable for low voltage switching applications.
6. **On-resistance (RDS(ON)):**
- **13mΩ @ VGS=4.5V:** The on-resistance at VGS=4.5V, providing low conduction loss.
- **10mΩ @ VGS=10V:** The on-resistance at VGS=10V, suitable for low conduction loss applications.
7. **Continuous Drain Current (ID):** 58A
- **Description:** The maximum current that the device can continuously conduct under specific conditions.
8. **Technology:** Trench
- **Description:** Trench technology provides low on-resistance and high switching efficiency, suitable for high current applications.
Domain and module applications：
Application Examples
D60NF06-VB MOSFET is mainly suitable for medium-to-high voltage and medium-to-high current switching and control applications. Here are some specific application examples:
1. **Power Management:**
- **Example:** In power management systems, D60NF06-VB can be used as a switching element to switch current in DC-DC converters and convert high voltage to a stable output voltage. Its low on-resistance and high current handling capability ensure efficient energy conversion.
2. **Motor Drive:**
- **Example:** In motor drive systems, D60NF06-VB can be used to switch motor power and provide a stable current to the motor. Its high continuous drain current capability is suitable for motor applications that require larger currents.
3. **Consumer Electronics:**
- **Example:** In consumer electronics such as power tools and home appliances, the D60NF06-VB can be used in switching power modules to provide stable power output and reduce energy loss and improve overall efficiency through its low on-resistance.
4. **Industrial Control Systems:**
- **Example:** In industrial control systems, the D60NF06-VB can be used to switch high current loads such as industrial automation equipment and power supply modules. Its excellent switching performance and high current handling capability ensure system reliability and efficiency.
The high current handling capability and low on-resistance of the D60NF06-VB MOSFET make it excel in medium and high voltage applications, making it suitable for power management, motor drives, and various consumer electronics and industrial control systems.
D60NF06-VB MOSFET is mainly suitable for medium-to-high voltage and medium-to-high current switching and control applications. Here are some specific application examples:
1. **Power Management:**
- **Example:** In power management systems, D60NF06-VB can be used as a switching element to switch current in DC-DC converters and convert high voltage to a stable output voltage. Its low on-resistance and high current handling capability ensure efficient energy conversion.
2. **Motor Drive:**
- **Example:** In motor drive systems, D60NF06-VB can be used to switch motor power and provide a stable current to the motor. Its high continuous drain current capability is suitable for motor applications that require larger currents.
3. **Consumer Electronics:**
- **Example:** In consumer electronics such as power tools and home appliances, the D60NF06-VB can be used in switching power modules to provide stable power output and reduce energy loss and improve overall efficiency through its low on-resistance.
4. **Industrial Control Systems:**
- **Example:** In industrial control systems, the D60NF06-VB can be used to switch high current loads such as industrial automation equipment and power supply modules. Its excellent switching performance and high current handling capability ensure system reliability and efficiency.
The high current handling capability and low on-resistance of the D60NF06-VB MOSFET make it excel in medium and high voltage applications, making it suitable for power management, motor drives, and various consumer electronics and industrial control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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