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D609-VB Product details

Product introduction:

D609-VB MOSFET Product Introduction



The D609-VB is a general purpose drain-source N+P channel MOSFET in a TO252-4L package with a drain-source voltage (VDS) of ±40V and a maximum drain current (ID) of ±50A. Its design utilizes Trench technology, which makes it excel in high efficiency switching and low on-resistance. The symmetrical design of the D609-VB allows it to provide stable performance in both N-channel and P-channel configurations, making it very useful in bidirectional switching and load control.



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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252-4L Common Drain-N+P ±40V 1.8/-1.7V ±50A 16/16mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252-4L Common Drain-N+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252-4L Common Drain-N+P ±40V 1.8/-1.7V ±50A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252-4L Common Drain-N+P ±40V 1.8/-1.7V ±50A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252-4L Common Drain-N+P
D609-VB MOSFET Detailed parameter description



- **Package type**: TO252-4L

- **Channel configuration**: Common drain source N+P channel

- **Drain-source voltage (VDS)**: ±40V

- **Gate-source voltage (VGS)**: ±20V

- **Threshold voltage (Vth)**:

- N channel: 1.8V

- P channel: -1.7V

- **On-resistance (RDS(ON))**:

- N channel:

- 14mΩ @ VGS = 4.5V

- 16mΩ @ VGS = 10V

- P channel:

- 14mΩ @ VGS = 4.5V

- 16mΩ @ VGS = 10V

- **Drain Current(ID)**: ±50A

- **Technology Type**: Trench



Domain and module applications:

D609-VB MOSFET Applications and Modules



The versatility and high performance of the D609-VB MOSFET make it suitable for a variety of applications and modules. Here are some typical application scenarios:



1. **Power Management**: D609-VB can be used in DC-DC converters and power switches. In power management systems, its symmetrical N+P channel design allows efficient switching in different power configurations, optimizing power conversion and control.



2. **Bidirectional Switching**: Due to its common drain source configuration, the D609-VB is particularly suitable for applications that require bidirectional switching, such as motor reverse drive and AC load control. Its high current handling capability and low on-resistance enable it to provide reliable performance in these applications.



3. **Load Switching**: In high current load switching, the low on-resistance and high current capability of D609-VB enable it to effectively control load current, reduce power consumption and heat generation, and is widely used in power modules and load management systems.



4. **Automation and Industrial Control**: In automation systems and industrial control applications, D609-VB provides efficient switching control and reliable performance, suitable for driving and controlling a variety of motors and loads. Its symmetrical N+P channel design enhances its flexibility in complex control systems.



Through these application examples, D609-VB MOSFET demonstrates its wide application in power management, bidirectional switch control, load switching and industrial control. Its high current handling capability and low on-resistance make it an ideal choice for a variety of applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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