D609-VB Product details
Product introduction:
The D609-VB is a general purpose drain-source N+P channel MOSFET in a TO252-4L package with a drain-source voltage (VDS) of ±40V and a maximum drain current (ID) of ±50A. Its design utilizes Trench technology, which makes it excel in high efficiency switching and low on-resistance. The symmetrical design of the D609-VB allows it to provide stable performance in both N-channel and P-channel configurations, making it very useful in bidirectional switching and load control.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±40V | 1.8/-1.7V | ±50A | 16/16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±40V | 1.8/-1.7V | ±50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±40V | 1.8/-1.7V | ±50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P |
- **Package type**: TO252-4L
- **Channel configuration**: Common drain source N+P channel
- **Drain-source voltage (VDS)**: ±40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**:
- N channel: 1.8V
- P channel: -1.7V
- **On-resistance (RDS(ON))**:
- N channel:
- 14mΩ @ VGS = 4.5V
- 16mΩ @ VGS = 10V
- P channel:
- 14mΩ @ VGS = 4.5V
- 16mΩ @ VGS = 10V
- **Drain Current(ID)**: ±50A
- **Technology Type**: Trench
Domain and module applications:
The versatility and high performance of the D609-VB MOSFET make it suitable for a variety of applications and modules. Here are some typical application scenarios:
1. **Power Management**: D609-VB can be used in DC-DC converters and power switches. In power management systems, its symmetrical N+P channel design allows efficient switching in different power configurations, optimizing power conversion and control.
2. **Bidirectional Switching**: Due to its common drain source configuration, the D609-VB is particularly suitable for applications that require bidirectional switching, such as motor reverse drive and AC load control. Its high current handling capability and low on-resistance enable it to provide reliable performance in these applications.
3. **Load Switching**: In high current load switching, the low on-resistance and high current capability of D609-VB enable it to effectively control load current, reduce power consumption and heat generation, and is widely used in power modules and load management systems.
4. **Automation and Industrial Control**: In automation systems and industrial control applications, D609-VB provides efficient switching control and reliable performance, suitable for driving and controlling a variety of motors and loads. Its symmetrical N+P channel design enhances its flexibility in complex control systems.
Through these application examples, D609-VB MOSFET demonstrates its wide application in power management, bidirectional switch control, load switching and industrial control. Its high current handling capability and low on-resistance make it an ideal choice for a variety of applications.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image