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D607-VB Product details
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1. D607-VB MOSFET Product Introduction
D607-VB is a bipolar MOSFET that integrates N-channel and P-channel MOSFETs. It adopts TO252-4L package and uses advanced trench technology. It has a drain-source voltage (VDS) of ±60V and is suitable for bidirectional switch applications. D607-VB is designed as a common source configuration, providing N-channel and P-channel MOSFETs, capable of carrying drain currents (ID) of 35A and -19A respectively. Its gate drive voltage range is ±20V, with an N-channel threshold voltage (Vth) of 1.8V and a P-channel threshold voltage (Vth) of -1.7V. The on-resistance (RDS(ON)) of D607-VB is 33mΩ/60mΩ (@VGS=4.5V) and 30mΩ/50mΩ (@VGS=10V) at different gate voltages, enabling it to provide efficient switching control under low power conditions.
D607-VB is a bipolar MOSFET that integrates N-channel and P-channel MOSFETs. It adopts TO252-4L package and uses advanced trench technology. It has a drain-source voltage (VDS) of ±60V and is suitable for bidirectional switch applications. D607-VB is designed as a common source configuration, providing N-channel and P-channel MOSFETs, capable of carrying drain currents (ID) of 35A and -19A respectively. Its gate drive voltage range is ±20V, with an N-channel threshold voltage (Vth) of 1.8V and a P-channel threshold voltage (Vth) of -1.7V. The on-resistance (RDS(ON)) of D607-VB is 33mΩ/60mΩ (@VGS=4.5V) and 30mΩ/50mΩ (@VGS=10V) at different gate voltages, enabling it to provide efficient switching control under low power conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±60V | 1.8/-1.7V | 35/-19A | 30/50mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±60V | 1.8/-1.7V | 35/-19A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±60V | 1.8/-1.7V | 35/-19A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P |
2. Detailed parameter description of D607-VB MOSFET
- **Package type**: TO252-4L
- **Channel configuration**: Common source-N+P-channel
- **Drain-source voltage (VDS)**: ±60V
- **Gate-source voltage (VGS)**: ±20V
- **N-channel threshold voltage (Vth)**: 1.8V
- **P-channel threshold voltage (Vth)**: -1.7V
- **N-channel on-resistance (RDS(ON))**: 33mΩ @ VGS = 4.5V
**N-channel on-resistance (RDS(ON))**: 30mΩ @ VGS = 10V
- **P-channel on-resistance (RDS(ON))**: 60mΩ @ VGS = 4.5V
**P-channel on-resistance (RDS(ON))**: 50mΩ @ VGS = 10V
- **N-channel drain current (ID)**: 35A
- **P-channel drain current (ID)**: -19A
- **Technology type**: Trench technology (Trench)
- **Package type**: TO252-4L
- **Channel configuration**: Common source-N+P-channel
- **Drain-source voltage (VDS)**: ±60V
- **Gate-source voltage (VGS)**: ±20V
- **N-channel threshold voltage (Vth)**: 1.8V
- **P-channel threshold voltage (Vth)**: -1.7V
- **N-channel on-resistance (RDS(ON))**: 33mΩ @ VGS = 4.5V
**N-channel on-resistance (RDS(ON))**: 30mΩ @ VGS = 10V
- **P-channel on-resistance (RDS(ON))**: 60mΩ @ VGS = 4.5V
**P-channel on-resistance (RDS(ON))**: 50mΩ @ VGS = 10V
- **N-channel drain current (ID)**: 35A
- **P-channel drain current (ID)**: -19A
- **Technology type**: Trench technology (Trench)
Domain and module applications：
3. Application fields and module examples of D607-VB MOSFET
The bipolar configuration and high current handling capability of D607-VB MOSFET make it suitable for a variety of fields and modules. Here are some main application examples:
1. **Power management**: In power management systems, D607-VB can be used for efficient control of DC-DC converters and power switches. Its bipolar design allows bidirectional switching functions in a single package, which is very suitable for applications requiring positive and negative power supplies, such as bipolar power converters and power inverters.
2. **Motor drive**: D607-VB is suitable for motor drive control, especially in motor drive systems that require positive and negative power supplies. Its high current capability and low on-resistance ensure that the motor can operate stably and improve system efficiency.
3. **Battery protection**: In battery management systems, D607-VB can implement bidirectional current switching to protect batteries from overcharge and over-discharge. Its high current handling capability makes it suitable for high-power battery protection modules, ensuring the safety and stability of the battery.
4. **AC Switch**: The D607-VB can be used in AC switching applications, and its common source configuration allows bidirectional control of AC current in a single package. This makes it suitable for the control of AC loads, such as electrical switching and dimming control.
5. **High Power Switch**: In applications that need to handle high power loads, such as high-power LED drivers and power modules, the low on-resistance and high current capability of the D607-VB can provide efficient switching performance, reduce power losses, and improve the overall efficiency of the system.
These application examples show the wide applicability of the D607-VB MOSFET in high current, high efficiency and bidirectional switch control, suitable for key switching and control functions in a variety of modern electronic systems.
The bipolar configuration and high current handling capability of D607-VB MOSFET make it suitable for a variety of fields and modules. Here are some main application examples:
1. **Power management**: In power management systems, D607-VB can be used for efficient control of DC-DC converters and power switches. Its bipolar design allows bidirectional switching functions in a single package, which is very suitable for applications requiring positive and negative power supplies, such as bipolar power converters and power inverters.
2. **Motor drive**: D607-VB is suitable for motor drive control, especially in motor drive systems that require positive and negative power supplies. Its high current capability and low on-resistance ensure that the motor can operate stably and improve system efficiency.
3. **Battery protection**: In battery management systems, D607-VB can implement bidirectional current switching to protect batteries from overcharge and over-discharge. Its high current handling capability makes it suitable for high-power battery protection modules, ensuring the safety and stability of the battery.
4. **AC Switch**: The D607-VB can be used in AC switching applications, and its common source configuration allows bidirectional control of AC current in a single package. This makes it suitable for the control of AC loads, such as electrical switching and dimming control.
5. **High Power Switch**: In applications that need to handle high power loads, such as high-power LED drivers and power modules, the low on-resistance and high current capability of the D607-VB can provide efficient switching performance, reduce power losses, and improve the overall efficiency of the system.
These application examples show the wide applicability of the D607-VB MOSFET in high current, high efficiency and bidirectional switch control, suitable for key switching and control functions in a variety of modern electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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